검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells Tukiainen A, Likonen J, Toikkanen L, Leinonen T Journal of Crystal Growth, 425, 60, 2015 |
| 2 |
Carrier profiling and crystal quality evaluation of thin AlxGa1-xAs (0.22 < x < 0.86) films by electrochemical capacitance/voltage technique Fedorenko Y, Jouhti T, Konttinen J, Likonen J, Pessa M Journal of the Electrochemical Society, 150(7), G380, 2003 |
| 3 |
Doping impurity distribution and crystal quality evaluation of AlGaAs : Si films (0.22 < x < 0.86) by electrochemical etching technique Fedorenko Y, Jouhti T, Konttinen J, Likonen J, Pessa M Thin Solid Films, 428(1-2), 181, 2003 |
| 4 |
Oxygen-related deep level defects in solid-source MBE grown GaInP Xiang N, Tukiainen A, Dekker J, Likonen J, Pessa M Journal of Crystal Growth, 227, 244, 2001 |
| 5 |
Be redistribution in GaInP and growth of GaInP/AlInP tunnel diode by gas source molecular beam epitaxy Li W, Likonen J, Haapamaa J, Pessa M Journal of Crystal Growth, 209(2-3), 459, 2000 |
| 6 |
Study of ohmic multilayer metal contacts to p-type ZnSe Rinta-Moykky A, Uusimaa P, Suhonen S, Valden M, Salokatve A, Pessa M, Likonen J Journal of Vacuum Science & Technology A, 17(2), 347, 1999 |
| 7 |
Structural aspects of self-assembly of thienoviologen molecular conductors on gold substrates Albers WM, Likonen J, Peltonen J, Teleman O, Lemmetyinen H Thin Solid Films, 330(2), 114, 1998 |
| 8 |
Molecular-Beam Epitaxy of P-Type Znsse Using a Nitric-Oxide Plasma Source Uusimaa P, Rakennus K, Salokatve A, Pessa M, Likonen J Journal of Vacuum Science & Technology A, 15(4), 2426, 1997 |