화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Efficiency limiting crystal defects in monocrystalline silicon and their characterization in production
Korsos F, Roszol L, Jay F, Veirman J, Draoua AD, Albaric M, Szarvas T, Kiss Z, Szabo A, Soczo I, Nadudvari G, Laurent N
Solar Energy Materials and Solar Cells, 186, 217, 2018
2 Linear smoothing of GaAs(100) during epitaxial growth on rough substrates
Whitwick MB, Tiedje T, Li T
Journal of Crystal Growth, 310(13), 3192, 2008
3 Burgers vector analysis by three-dimensional laser-scattering tomography
Albrecht M, Naumann M
Journal of Crystal Growth, 310(18), 4031, 2008
4 The effects of Sn4+ ion on the growth habit and optical properties of KDP crystal
Wang B, Fang CS, Wang SL, Sun X, Gu QT, Li YP, Xu XG, Zhang JQ, Liu B, Mou XM
Journal of Crystal Growth, 297(2), 352, 2006
5 Octahedral void defects in Czochralski silicon
Itsumi M
Journal of Crystal Growth, 237, 1773, 2002
6 Scattering centers caused by adding metaphosphate into KDP crystals
Wang SL, Gao ZS, Fu YJ, Sun X, Zhang JG, Zeng H, Li YP
Journal of Crystal Growth, 223(3), 415, 2001
7 Dislocation studies in VCz GaAs by laser scattering tomography
Naumann M, Rudolph P, Neubert M, Donecker J
Journal of Crystal Growth, 231(1-2), 22, 2001
8 Striations in YIG fibers grown by the laser-heated pedestal method
Lim HJ, DeMattei RC, Feigelson RS, Rochford K
Journal of Crystal Growth, 212(1-2), 191, 2000
9 Defects in flux and Czochralski grown beta-BaB2O4 crystals observed by light scattering tomography
Tsuru T, Ogawa T
Journal of Crystal Growth, 216(1-4), 352, 2000
10 Method for Studying the Grown-in Defect Density Spectra in Czochralski Silicon-Wafers
Kissinger G, Graf D, Lambert U, Richter H
Journal of the Electrochemical Society, 144(4), 1447, 1997