검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Single crystalline SiGe layers on Si by solid phase epitaxy Lieten RR, McCallum JC, Johnson BC Journal of Crystal Growth, 416, 34, 2015 |
| 2 |
Correlation between strain and the metal-insulator transition in epitaxial V2O3 thin films grown by Molecular Beam Epitaxy Dillemans L, Lieten RR, Menghini M, Smets T, Seo JW, Locquet JP Thin Solid Films, 520(14), 4730, 2012 |
| 3 |
Interface of GaN grown on Ge(111) by plasma assisted molecular beam epitaxy Lieten RR, Richard O, Degroote S, Leys M, Bender H, Borghs G Journal of Crystal Growth, 314(1), 71, 2011 |
| 4 |
Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers Lieten RR, Afanas'ev VV, Thoan NH, Degroote S, Walukiewicz W, Borghs G Journal of the Electrochemical Society, 158(4), G358, 2011 |
| 5 |
Observation of a paramagnetic defect at the epitaxial Ge3N4/(111)Ge interface by electron spin resonance Nguyen APD, Stesmans A, Afanas'ev VV, Lieten RR, Borghs G Thin Solid Films, 518(9), 2361, 2010 |
| 6 |
Suppression of domain formation in GaN layers grown on Ge(111) Lieten RR, Degroote S, Leys M, Borghs G Journal of Crystal Growth, 311(5), 1306, 2009 |
| 7 |
Growth of InN on Ge(111) by molecular beam epitaxy using a GaN buffer Lieten RR, Degroote S, Leys M, Derluyn J, Kuijk M, Borghs G Journal of Crystal Growth, 310(6), 1132, 2008 |