검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Influence of the AlN buffer layer growth on AlGaN/GaN films deposited on (111)Si substrates Liaw HM, Venugopal R, Wan J, Melloch MR Solid-State Electronics, 45(3), 417, 2001 |
| 2 |
Epitaxial GaN films grown on Si(111) with varied buffer layers Liaw HM, Venugopal R, Wan J, Melloch MR Solid-State Electronics, 45(7), 1173, 2001 |
| 3 |
Crack-free, single-crystal GaN grown on 100 mm diameter silicon Liaw HM, Venugopal R, Wan J, Doyle R, Fejes P, Loboda MJ, Melloch MR Materials Science Forum, 338-3, 1463, 2000 |
| 4 |
GaN epilayers grown on 100 mm diameter Si(111) substrates Liaw HM, Venugopal R, Wan J, Doyle R, Fejes PL, Melloch MR Solid-State Electronics, 44(4), 685, 2000 |
| 5 |
Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates Liaw HM, Doyle R, Fejes PL, Zollner S, Konkar A, Linthicum KJ, Gehrke T, Davis RF Solid-State Electronics, 44(4), 747, 2000 |
| 6 |
Comparative study of the elastic properties of polycrystalline aluminum nitride films on silicon by Brillouin light scattering Carlotti G, Gubbiotti G, Hickernell FS, Liaw HM, Socino G Thin Solid Films, 310(1-2), 34, 1997 |