검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Formation of V-grooves on the (Al,Ga)N surface as means of tensile stress relaxation Cheng K, Leys M, Degroote S, Bender H, Favia P, Borghs G, Germain M Journal of Crystal Growth, 353(1), 88, 2012 |
| 2 |
Interface of GaN grown on Ge(111) by plasma assisted molecular beam epitaxy Lieten RR, Richard O, Degroote S, Leys M, Bender H, Borghs G Journal of Crystal Growth, 314(1), 71, 2011 |
| 3 |
AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation Cheng K, Degroote S, Leys M, Medjdoub F, Derluyn J, Sijmus B, Germain M, Borghs G Journal of Crystal Growth, 315(1), 204, 2011 |
| 4 |
Solid phase epitaxy of amorphous Ge films deposited by PECVD Ma QB, Lieten R, Leys M, Degroote S, Germain M, Borghs G Journal of Crystal Growth, 331(1), 40, 2011 |
| 5 |
Selective Area Growth of InP and Defect Elimination on Si (001) Substrates Wang G, Leys M, Loo R, Richard O, Bender H, Brammertz G, Waldron N, Wang WE, Dekoster J, Caymax M, Seefeldt M, Heyns M Journal of the Electrochemical Society, 158(6), H645, 2011 |
| 6 |
Suppression of domain formation in GaN layers grown on Ge(111) Lieten RR, Degroote S, Leys M, Borghs G Journal of Crystal Growth, 311(5), 1306, 2009 |
| 7 |
Controlled III/V Nanowire Growth by Selective-Area Vapor-Phase Epitaxy Cantoro M, Brammertz G, Richard O, Bender H, Clemente F, Leys M, Degroote S, Caymax M, Heyns M, De Gendt S Journal of the Electrochemical Society, 156(11), H860, 2009 |
| 8 |
Growth of InN on Ge(111) by molecular beam epitaxy using a GaN buffer Lieten RR, Degroote S, Leys M, Derluyn J, Kuijk M, Borghs G Journal of Crystal Growth, 310(6), 1132, 2008 |
| 9 |
Growth and characterization of unintentionally doped GaN grown on silicon(111) substrates Leys M, Cheng K, Derluyn J, Degroote S, Germain M, Borghs G, Taylor CA, Dawson P Journal of Crystal Growth, 310(23), 4888, 2008 |
| 10 |
GaAs on Ge for CMOS Brammertz G, Caymax M, Meuris M, Heyns M, Mols Y, Degroote S, Leys M Thin Solid Films, 517(1), 148, 2008 |