검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Low-frequency excess noise characterizations of laser-assisted de-bonded GaN films Chan CP, Leung BH, Fong WK, Lai PK, Loke YH, Surya C, Yue TM, Man HC, Xiu X, Zhang R Applied Surface Science, 252(4), 1049, 2005 |
| 2 |
Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devices Leung BH, Fong WK, Surya C Applied Surface Science, 212, 897, 2003 |
| 3 |
Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy Lu LW, Fong WK, Zhu CF, Leung BH, Surya C, Wang J, Ge WK Journal of Crystal Growth, 234(1), 99, 2002 |
| 4 |
High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer Fong WK, Zhu CF, Leung BH, Surya C Journal of Crystal Growth, 233(3), 431, 2001 |