검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Metal bonding in SiC based substrates Matko I, Chenevier B, Madar R, Roussel H, Coindeau S, Letertre F, Richtarch C, Di Cioccio L Materials Science Forum, 483, 781, 2005 |
| 2 |
Integration of buried insulators with high thermal conductivity in SOI MOSFETs: Thermal properties and short channel effects Bresson N, Cristoloveanu S, Mazure C, Letertre F, Iwai H Solid-State Electronics, 49(9), 1522, 2005 |
| 3 |
Growth and characterization of GaN-based structures on SiCOI-engineered substrates Dikme Y, van Gemmern P, Lin YC, Szymakowski A, Kalisch H, Faure B, Richtarch C, Larheche H, Bove P, Letertre F, Woitok JF, Efthimiadis K, Jansen RH, Heuken M Journal of Crystal Growth, 272(1-4), 500, 2004 |
| 4 |
AlGaN/GaNHEMT structures grown on SiCOI wafers obtained by the Smart CutTM technology. Larheche H, Faure B, Richtarch C, Letertre F, Langer R, Bove P Materials Science Forum, 457-460, 1621, 2004 |
| 5 |
QuaSiC Smart-Cut (R) substrates for SiC high power devices Letertre F, Jalaguier E, Di Cioccio L, Templier F, Bluet JM, Banc C, Matko I, Chenevier B, Bano E, Guillot G, Billon T, Aspar B, Madar R, Ghyselen B Materials Science Forum, 389-3, 151, 2002 |
| 6 |
SiC power devices on QUASIC and SiCOI Smart-Cut (R) substrates: First demonstrations Letertre F, Daval N, Templier F, Bano E, Planson D, Di Ciocco L, Jalaguier E, Bluet JM, Billon T, Madar R, Chante JP Materials Science Forum, 433-4, 813, 2002 |
| 7 |
Electrical and physical behavior of SiC layers on insulator (SiCOI) Hugonnard-Bruyere E, Letertre F, Di Cioccio L, von Bardeleben HJ, Cantin JL, Ouisse T, Billon T, Guillot G Materials Science Forum, 338-3, 715, 2000 |