| 1 |
Numerical study of liquid phase diffusion growth of SiGe subjected to accelerated crucible rotation
Sekhon M, Lent B, Dost S
Journal of Crystal Growth, 438, 90, 2016 |
| 2 |
Effect of free surface and gravity on silicon dissolution in germanium melt
Armour N, Dost S, Lent B
Journal of Crystal Growth, 299(1), 227, 2007 |
| 3 |
Growth of bulk SiGe single crystals by liquid phase diffusion
Yildiz M, Dost S, Lent B
Journal of Crystal Growth, 280(1-2), 151, 2005 |
| 4 |
A three-dimensional numerical simulation model for the growth of CdTe single crystals by the travelling heater method under magnetic field
Liu Y, Dost S, Lent B, Redden RF
Journal of Crystal Growth, 254(3-4), 285, 2003 |
| 5 |
Growth of bulk single crystals under applied magnetic field by liquid phase electroepitaxy
Sheibani H, Dost S, Sakai S, Lent B
Journal of Crystal Growth, 258(3-4), 283, 2003 |
| 6 |
Mathematical simulation of the traveling heater method growth of ternary semiconductor materials under suppressed gravity conditions
Lent B, Dost S, Redden RF, Liu Y
Journal of Crystal Growth, 237, 1876, 2002 |
| 7 |
A numerical simulation study for the effect of applied magnetic field in liquid phase electroepitaxy
Dost S, Liu Y, Lent B
Journal of Crystal Growth, 240(1-2), 39, 2002 |
| 8 |
Photoluminescence and Hall effect measurements of Te segregation in Te-doped GaSb grown in terrestrial and microgravity conditions
Labrie D, O'Brien J, Redden RF, Audet N, Lent B, Micklethwaite WF
Journal of Vacuum Science & Technology A, 18(2), 701, 2000 |
| 9 |
Initial Results for InGaAs Films Grown on InGaAs Substrates
Hoke WE, Lyman PS, Carter JR, Hendriks HT, Bonner WA, Lent B
Journal of Vacuum Science & Technology B, 13(2), 678, 1995 |
