화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Substrate preparation and interface grading in InGaAs InAlAs photodiodes grown on InP by molecular-beam epitaxy
Lenox C, Nie H, Kinsey G, Hansing C, Campbell JC, Holmes AL, Streetman BG
Journal of Vacuum Science & Technology B, 17(3), 1175, 1999
2 Resonant-cavity-enhanced avalanche photodiodes grown by molecular beam epitaxy on InP for detection near 1.55 mu m
Anselm KA, Nie H, Lenox C, Hansing C, Campbell JC, Streetman BG
Journal of Vacuum Science & Technology B, 16(3), 1426, 1998