검색결과 : 9건
No. | Article |
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1 |
Crystal Growth Mechanisms of BiFeO3 Nanoparticles Bai XF, Bugnet M, Frontera C, Gemeiner P, Guillot J, Lenoble D, Infante IC Inorganic Chemistry, 58(17), 11364, 2019 |
2 |
Hierarchical Scattering Function-for Silica-Filled Rubbers under Deformation: Effect of the Initial Cluster Distribution Staropoli M, Gerstner D, Sztucki M, Vehres G, Duez B, Westermann S, Lenoble D, Pyckhout-Hintzen W Macromolecules, 52(24), 9735, 2019 |
3 |
Photocatalytic degradation behavior of multiple xenobiotics using MOCVD synthesized ZnO nanowires Roge V, Guignard C, Lamblin G, Laporte F, Fechete I, Garin F, Dinia A, Lenoble D Catalysis Today, 306, 215, 2018 |
4 |
Atomic layer deposition of cobalt carbide films and their magnetic properties using propanol as a reducing agent Sarr M, Bahlawane N, Arl D, Dossot M, McRae E, Lenoble D Applied Surface Science, 379, 523, 2016 |
5 |
Electrical and optical properties of Cu-Cr-O thin films fabricated by chemical vapour deposition Popa PL, Crepelliere J, Leturcq R, Lenoble D Thin Solid Films, 612, 194, 2016 |
6 |
Multi-gate devices for the 32 nm technology node and beyond Collaert N, De Keersgieter A, Dixit A, Ferain I, Lai LS, Lenoble D, Mercha A, Nackaerts A, Pawlak BJ, Rooyackers R, Schulz T, San KT, Son NJ, Van Dal MJH, Verheyen P, von Arnim K, Witters L, Meyer KD, Biesemans S, Jurczak M Solid-State Electronics, 52(9), 1291, 2008 |
7 |
Plasma doping implant depth profile calculation based on ion energy distribution measurements Godet L, Fang Z, Radovanov S, Walther S, Arevalo E, Lallement F, Scheuer JT, Miller T, Lenoble D, Cartry G, Cardinaud C Journal of Vacuum Science & Technology B, 24(5), 2391, 2006 |
8 |
Ultra-shallow, super-doped and box-like junctions realized by laser-induced doping Kerrien G, Boulmer J, Debarre D, Bouchier D, Grouillet A, Lenoble D Applied Surface Science, 186(1-4), 45, 2002 |
9 |
Plasma doping for shallow junctions Goeckner MJ, Felch SB, Fang Z, Lenoble D, Galvier J, Grouillet A, Yeap GCF, Bang D, Lin MR Journal of Vacuum Science & Technology B, 17(5), 2290, 1999 |