검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Observation of deep level centers in 4H and 6H silicon carbide metal oxide semiconductor field effect transistors Meyer DJ, Dautrich MS, Lenahan PM, Lelis A Materials Science Forum, 483, 593, 2005 |
| 2 |
Spin dependent recombination at deep-level centers in 6H silicon carbide/silicon metal oxide semiconductor field effect transistors Meyer DJ, Bohna NA, Lenahan PM, Lelis A Materials Science Forum, 457-460, 477, 2004 |
| 3 |
E' centers and leakage currents in the gate oxides of metal oxide silicon devices Lenahan PM, Mele JJ Journal of Vacuum Science & Technology B, 18(4), 2169, 2000 |
| 4 |
What can electron paramagnetic resonance tell us about the Si/SiO2 system? Lenahan PM, Conley JF Journal of Vacuum Science & Technology B, 16(4), 2134, 1998 |