검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Influence of an in situ-deposited SiNx intermediate layer inside GaN and AlGaN layers on SiC substrates Engl K, Beer M, Gmeinwieser N, Schwarz UT, Zweck J, Wegscheider W, Miller S, Miler A, Lugauer HJ, Bruderl G, Lell A, Harle V Journal of Crystal Growth, 289(1), 6, 2006 |
| 2 |
In-situ stress measurement during the gallium ion implantation-induced doping of nitride Sienz S, Rauschenbach B, Wenzel A, Lell A, Bader S, Harle V Thin Solid Films, 415(1-2), 1, 2002 |
| 3 |
GaN-based lasers on SiC: influence of mirror reflectivity on L-I characteristics Schwegler V, Schad SS, Scherer M, Kamp M, Ulu G, Emsley M, Unlu MS, Lell A, Bader S, Hahne B, Lugauer HJ, Kuhn F, Weimar A, Harle V Journal of Crystal Growth, 230(3-4), 512, 2001 |