검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
The benefits and current progress of SiC SGTOs for pulsed power applications Ogunniyi A, O'Brien H, Lelis A, Scozzie C, Shaheen W, Agarwal A, Zhang J, Callanan R, Temple V Solid-State Electronics, 54(10), 1232, 2010 |
| 2 |
Observation of deep level centers in 4H and 6H silicon carbide metal oxide semiconductor field effect transistors Meyer DJ, Dautrich MS, Lenahan PM, Lelis A Materials Science Forum, 483, 593, 2005 |
| 3 |
Spin dependent recombination at deep-level centers in 6H silicon carbide/silicon metal oxide semiconductor field effect transistors Meyer DJ, Bohna NA, Lenahan PM, Lelis A Materials Science Forum, 457-460, 477, 2004 |
| 4 |
Interface properties of 4H-SiC/SiO2 with MOS capacitors and FETs annealed in O-2, N2O, NO and CO2 Wang W, Banerjee S, Chow TP, Gutmann RJ, Issacs-Smith T, Williams J, Jones KA, Lelis A, Tipton W, Scozzie S, Agarwal A Materials Science Forum, 457-460, 1309, 2004 |
| 5 |
Pulsed laser deposition: A novel growth technique for wide-bandgap semiconductor research Vispute RD, Enck R, Patel A, Ming B, Sharma RP, Venkatesan T, Scozzie CJ, Lelis A, McLean FB, Zheleva T, Jones KA Materials Science Forum, 338-3, 1503, 2000 |