검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate Kadir A, Srivastava S, Li Z, Lee KEK, Sasangka WA, Gradecak S, Chua SJ, Fitzgerald EA Thin Solid Films, 663, 73, 2018 |
| 2 |
Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers Kohen D, Nguyen XS, Made RI, Heidelberger C, Lee KH, Lee KEK, Fitzgerald EA Journal of Crystal Growth, 478, 64, 2017 |
| 3 |
Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe Wang B, Wang C, Kohen DA, Made RI, Lee KEK, Kim T, Milakovich T, Fitzgerald EA, Yoon SF, Michel J Journal of Crystal Growth, 441, 78, 2016 |
| 4 |
The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD - Application to a 200 mm GaAs virtual substrate Kohen D, Bao SY, Lee KH, Lee KEK, Tan CS, Yoon SF, Fitzgerald EA Journal of Crystal Growth, 421, 58, 2015 |