화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate
Zhang ZL, Song L, Li WY, Fu K, Yu GH, Zhang XD, Fan YM, Deng XG, Li SM, Sun SC, Li XJ, Yuan J, Sun Q, Dong ZH, Cai Y, Zhang BS
Solid-State Electronics, 134, 39, 2017
2 Characterization of cubic phase MgZnO/Si(100) interfaces
Liang J, Wu HZ, Lao YF, Chen NB, Yu P, Xu TN
Applied Surface Science, 252(4), 1147, 2005
3 Leakage mechanism of irinotecan from water-in-oil-in-water (W/O/W) multiple emulsions
Toorisaka E, Kokazu Y, Kamiya N, Goto M
KAGAKU KOGAKU RONBUNSHU, 29(2), 294, 2003
4 Comparison of high-temperature electrical characterizations of pulsed-laser deposited AlN on 6H- and 4H-SiC from 25 to 450 degrees C
Lelis AJ, Scozzie CJ, McLean FB, Geil BR, Vispute RD, Venkatesan T
Materials Science Forum, 338-3, 1137, 2000