검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy Chauveau JM, Buell DA, Laugt M, Vennegues P, Teisseire-Doninelli M, Berard-Bergery S, Deparis C, Lo B, Vinter B, Morhain C Journal of Crystal Growth, 301, 366, 2007 |
| 2 |
AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111) Cordier Y, Semond F, Hugues M, Natali F, Lorenzini P, Haas H, Chenot S, Laugt M, Tottereau O, Vennegues P, Massies J Journal of Crystal Growth, 278(1-4), 393, 2005 |
| 3 |
Hexagonal c-axis GaN layers grown by metalorganic vapor-phase epitaxy on Si(001) Joblot S, Feltin E, Beraudo E, Vennegues P, Leroux M, Omnes F, Laugt M, Cordier Y Journal of Crystal Growth, 280(1-2), 44, 2005 |
| 4 |
Wide-band-gap ZnMgBeSe alloys grown onto GaAs by molecular beam epitaxy Tournie E, Vigue F, Laugt M, Faurie JP Journal of Crystal Growth, 223(4), 461, 2001 |
| 5 |
From relaxed to highly tensily strained GaN grown on 6H-SiC and Si(111): Optical characterization Leroux M, Lahreche H, Semond F, Laugt M, Feltin E, Schnell N, Beaumont B, Gibart P, Massies J Materials Science Forum, 353-356, 795, 2001 |
| 6 |
Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111) Lahreche H, Vennegues P, Tottereau O, Laugt M, Lorenzini P, Leroux M, Beaumont B, Gibart P Journal of Crystal Growth, 217(1-2), 13, 2000 |
| 7 |
High quality GaN on Si(111) using (AlN/GaN)(x) superlattice and maskless ELO Lahreche H, Bousquet V, Laugt M, Tottereau O, Vennegues P, Beaumont B, Gibart P Materials Science Forum, 338-3, 1487, 2000 |