검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Molecular beam epitaxy of InN nanowires on Si Sarwar ATMG, Carnevale SD, Kent TF, Laskar MR, May BJ, Myers RC Journal of Crystal Growth, 428, 59, 2015 |
| 2 |
High-resolution X-ray diffraction investigations of the microstructure of MOVPE grown a-plane AlGaN epilayers Laskar MR, Ganguli T, Hatui N, Rahman AA, Gokhale MR, Bhattacharya A Journal of Crystal Growth, 315(1), 208, 2011 |
| 3 |
Influence of buffer layers on the microstructure of MOVPE grown a-plane InN Laskar MR, Ganguli T, Kadir A, Hatui N, Rahman AA, Shah AP, Gokhale MR, Bhattacharya A Journal of Crystal Growth, 315(1), 233, 2011 |
| 4 |
Optimization of a-plane (1 1 (2)over-bar 0) InN grown via MOVPE on a-plane GaN buffer layers on r-plane (1 (1)over-bar 0 2) sapphire Laskar MR, Kadir A, Rahman AA, Shah AP, Hatui N, Gokhale MR, Bhattacharya A Journal of Crystal Growth, 312(14), 2033, 2010 |
| 5 |
Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy Lobo N, Kadir A, Laskar MR, Shah AP, Gokhale MR, Rahman AA, Arora BM, Narasimhan KL, Bhattacharya A Journal of Crystal Growth, 310(23), 4747, 2008 |