화학공학소재연구정보센터
검색결과 : 28건
No. Article
1 An accurate model for predicting high frequency noise of nanoscale NMOS SOI transistors
Shen YF, Cui J, Mohammadi S
Solid-State Electronics, 131, 45, 2017
2 A compact D-band monolithic APDP-based sub-harmonic mixer
Zhang SZ, Sun LL, Wang X, Wen JC, Liu J
Solid-State Electronics, 137, 62, 2017
3 Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects
Jarndal A, Ghannouchi FM
Solid-State Electronics, 123, 19, 2016
4 Both electric field and temperature independent behavior of piezoelectric property of Pb(Ni1/3Nb2/3)O-3-PbTiO3
Pan Z, Chen J, Fan LL, Wang Q, Liu LJ, Fang L, Xing XR
Materials Research Bulletin, 61, 448, 2015
5 Using electrical analogy to describe mass and charge transport in lithium-ion batteries
Rael S, Hinaje M
Journal of Power Sources, 222, 112, 2013
6 Using electrical analogy to describe mass and charge transport in PEM fuel cell
Noiying P, Hinaje M, Thounthong P, Rael S, Davat B
Renewable Energy, 44, 128, 2012
7 Investigation on the thermal behavior of microwave GaN HEMTs
Crupi G, Avolio G, Raffo A, Barmuta P, Schreurs DMMP, Caddemi A, Vannini G
Solid-State Electronics, 64(1), 28, 2011
8 Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors
Vestling L, Bengtsson O, Mum KH, Olsson J
Solid-State Electronics, 54(2), 171, 2010
9 Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design
Jarndal A, Aflaki P, Degachi L, Birafane A, Kouki A, Negra R, Ghannouchi FM
Solid-State Electronics, 54(7), 696, 2010
10 Single-transistor latch-up and large-signal reliability in SOI CMOS RF power transistors
Carrara F, Presti CD, Scuderi A, Palmisano G
Solid-State Electronics, 54(9), 957, 2010