검색결과 : 28건
No. | Article |
---|---|
1 |
An accurate model for predicting high frequency noise of nanoscale NMOS SOI transistors Shen YF, Cui J, Mohammadi S Solid-State Electronics, 131, 45, 2017 |
2 |
A compact D-band monolithic APDP-based sub-harmonic mixer Zhang SZ, Sun LL, Wang X, Wen JC, Liu J Solid-State Electronics, 137, 62, 2017 |
3 |
Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects Jarndal A, Ghannouchi FM Solid-State Electronics, 123, 19, 2016 |
4 |
Both electric field and temperature independent behavior of piezoelectric property of Pb(Ni1/3Nb2/3)O-3-PbTiO3 Pan Z, Chen J, Fan LL, Wang Q, Liu LJ, Fang L, Xing XR Materials Research Bulletin, 61, 448, 2015 |
5 |
Using electrical analogy to describe mass and charge transport in lithium-ion batteries Rael S, Hinaje M Journal of Power Sources, 222, 112, 2013 |
6 |
Using electrical analogy to describe mass and charge transport in PEM fuel cell Noiying P, Hinaje M, Thounthong P, Rael S, Davat B Renewable Energy, 44, 128, 2012 |
7 |
Investigation on the thermal behavior of microwave GaN HEMTs Crupi G, Avolio G, Raffo A, Barmuta P, Schreurs DMMP, Caddemi A, Vannini G Solid-State Electronics, 64(1), 28, 2011 |
8 |
Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors Vestling L, Bengtsson O, Mum KH, Olsson J Solid-State Electronics, 54(2), 171, 2010 |
9 |
Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design Jarndal A, Aflaki P, Degachi L, Birafane A, Kouki A, Negra R, Ghannouchi FM Solid-State Electronics, 54(7), 696, 2010 |
10 |
Single-transistor latch-up and large-signal reliability in SOI CMOS RF power transistors Carrara F, Presti CD, Scuderi A, Palmisano G Solid-State Electronics, 54(9), 957, 2010 |