검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors Pesic M, Fengler FPG, Larcher L, Padovani A, Schenk T, Grimley ED, Sang XH, LeBeau JM, Slesazeck S, Schroeder U, Mikolajick T Advanced Functional Materials, 26(25), 4601, 2016 |
| 2 |
Anomalous random telegraph noise and temporary phenomena in resistive random access memory Puglisi FM, Larcher L, Padovani A, Pavan P Solid-State Electronics, 125, 204, 2016 |
| 3 |
Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS Puglisi FM, Pavan P, Larcher L, Padovani A Solid-State Electronics, 113, 132, 2015 |
| 4 |
A study on HfO2 RRAM in HRS based on I-V and RTN analysis Puglisi FM, Pavan P, Padovani A, Larcher L Solid-State Electronics, 102, 69, 2014 |
| 5 |
RTS noise characterization of HfOx RRAM in high resistive state Puglisi FM, Pavan P, Padovani A, Larcher L, Bersuker G Solid-State Electronics, 84, 160, 2013 |
| 6 |
Grain boundary-driven leakage path formation in HfO2 dielectrics Bersuker G, Yum J, Vandelli L, Padovani A, Larcher L, Iglesias V, Porti M, Nafria M, McKenna K, Shluger A, Kirsch P, Jammy R Solid-State Electronics, 65-66, 146, 2011 |
| 7 |
Carbon-doped GeTe: A promising material for Phase-Change Memories Beneventi GB, Perniola L, Sousa V, Gourvest E, Maitrejean S, Bastien JC, Bastard A, Hyot B, Fargeix A, Jahan C, Nodin JF, Persico A, Fantini A, Blachier D, Toffoli A, Loubriat S, Roule A, Lhostis S, Feldis H, Reimbold G, Billon T, De Salvo B, Larcher L, Pavan P, Bensahel D, Mazoyer P, Annunziata R, Zuliani P, Boulanger F Solid-State Electronics, 65-66, 197, 2011 |