검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Quantum dot lasers grown by gas source molecular-beam epitaxy Gong Q, Chen P, Li SG, Lao YF, Cao CF, Xu CF, Zhang YG, Feng SL, Ma CH, Wang HL Journal of Crystal Growth, 323(1), 450, 2011 |
| 2 |
Optical Investigations of Directly Wafer-Bonded InP-GaAs Heterojunctions Lao YF, Wu HZ, Cao M, Cao CF Journal of the Electrochemical Society, 156(3), H220, 2009 |
| 3 |
InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching Cao M, Wu HZ, Lao YF, Cao CF, Liu C Materials Research Bulletin, 44(12), 2217, 2009 |
| 4 |
Luminescence enhancement of plasma-etched InAsP/InGaAsP quantum wells Cao M, Lao YF, Wu HZ, Liu C, Xie ZS, Cao CF, Wu HZ Journal of Vacuum Science & Technology A, 26(2), 219, 2008 |
| 5 |
Characterization of cubic phase MgZnO/Si(100) interfaces Liang J, Wu HZ, Lao YF, Chen NB, Yu P, Xu TN Applied Surface Science, 252(4), 1147, 2005 |
| 6 |
GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures Huang ZC, Wu HZ, Lao YF, Cao M, Liu C Journal of Crystal Growth, 281(2-4), 255, 2005 |
| 7 |
Observations of interfaces in direct wafer-bonded InP-GaAs structures Lao YF, Wu HZ, Li M Journal of Vacuum Science & Technology B, 23(6), 2351, 2005 |
| 8 |
Annealing effects on the microstructure and photoluminescence properties of Ni-doped ZnO films Qiu DJ, Wu HZ, Feng AM, Lao YF, Chen NB, Xu TN Applied Surface Science, 222(1-4), 263, 2004 |
| 9 |
Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs Lei HP, Wu HZ, Lao YF, Qi M, Li AZ, Shen WZ Journal of Crystal Growth, 256(1-2), 96, 2003 |