검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Pd/Ru/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors Dormaier R, Zhang Q, Chou YC, Lange MD, Yang JM, Oki A, Mohney SE Journal of Vacuum Science & Technology B, 27(5), 2145, 2009 |
| 2 |
InAs/AlSb high-electron-mobility transistors by molecular-beam epitaxy for low-power applications Lange MD, Tsai RS, Deal WR, Nam PS, Lee LJ, Sandhu RS, Hsing R, Poust BD, Kraus JL, Gutierrez-Aitken AL, Bennett BR, Boos JB, Noori AM, Hayashi SL, Goorsky MS Journal of Vacuum Science & Technology B, 24(6), 2581, 2006 |
| 3 |
Materials growth for InAs high electron mobility transistors and circuits Bennett BR, Tinkham BP, Boos JB, Lange MD, Tsai R Journal of Vacuum Science & Technology B, 22(2), 688, 2004 |
| 4 |
Metamorphic 6.00 A heterojunction bipolar transistors on InP by molecular-beam epitaxy Lange MD, Cavus A, Monier C, Sandhu RS, Block TR, Gambin VF, Sawdai DJ, Gutierrez-Aitken AL Journal of Vacuum Science & Technology B, 22(3), 1570, 2004 |