| 1 |
Effect of growth interruptions on TiO2 films deposited by plasma enhanced chemical vapour deposition
Li D, Goullet A, Carette M, Granier A, Landesman JP
Materials Chemistry and Physics, 182, 409, 2016 |
| 2 |
In situ spectroscopic ellipsometry study of TiO2 films deposited by plasma enhanced chemical vapour deposition
Li D, Carette M, Granier A, Landesman JP, Goullet A
Applied Surface Science, 283, 234, 2013 |
| 3 |
Spectroscopic ellipsometry analysis of TiO2 films deposited by plasma enhanced chemical vapor deposition in oxygen/titanium tetraisopropoxide plasma
Li D, Carette M, Granier A, Landesman JP, Goullet A
Thin Solid Films, 522, 366, 2012 |
| 4 |
Investigation of BST thin films deposited by RF magnetron sputtering in pure Argon
Challali F, Besland MP, Benzeggouta D, Borderon C, Hugon MC, Salimy S, Saubat JC, Charpentier A, Averty D, Goullet A, Landesman JP
Thin Solid Films, 518(16), 4619, 2010 |
| 5 |
Modeling of the chemically assisted ion beam etching process: Application to the GaAs etching by Cl-2/Ar+
Elmonser L, Rhallabi A, Gaillard M, Landesman JP, Talneau A, Pommereau F, Bouadma N
Journal of Vacuum Science & Technology A, 25(1), 126, 2007 |
| 6 |
Spatially resolved photoluminescence and Raman spectroscopy of bandgap gratings fabricated in GaAs/AlAs superlattice waveguide using quantum well intermixing
Helmy AS, Martin P, Landesman JP, Bryce AC, Aitchison JS, Marsh JH
Journal of Crystal Growth, 288(1), 53, 2006 |
| 7 |
Influence of plasma pulsing on the deposition kinetics and film structure in low pressure oxygen/hexamethyldisiloxane radiofrequency plasmas
Bousquet A, Granier A, Goullet A, Landesman JP
Thin Solid Films, 514(1-2), 45, 2006 |
| 8 |
Chemically assisted ion beam etching of GaAs by argon and chlorine gases: Experimental and simulation investigations
Rhallabi A, Gaillard M, Elmonser L, Marcos G, Talneau A, Pommereau F, Pagnod-Rossiaux P, Landesman JP, Bouadma N
Journal of Vacuum Science & Technology B, 23(5), 1984, 2005 |
| 9 |
Structural and electrical properties of SiO2 films deposited on Si substrates from tetraethoxysilane/oxygen plasmas
Goghero D, Goullet A, Landesman JP
Solid-State Electronics, 49(3), 369, 2005 |
