| 1 |
Optimization of post-N-2 treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric application
Cheng YL, Wang YL, Lan JK, Wu SA, Chang SC, Lo KY, Feng MS
Journal of Vacuum Science & Technology B, 22(4), 1792, 2004 |
| 2 |
Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallization
Cheng YL, Wang YL, Liu CP, Wu YL, Lo KY, Liu CW, Lan JK, Ay C, Feng MS
Materials Chemistry and Physics, 83(1), 150, 2004 |
| 3 |
Monitor and eliminate the circular defects in HDP-STI deposition through oxynitride/oxide composite liner
Lan JK, Wang YL, Liu CP, Lee WH, Ay C, Cheng YL, Chang SC
Thin Solid Films, 447, 645, 2004 |
| 4 |
Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material
Cheng YL, Wang YL, Wu YL, Liu CP, Liu CW, Lan JK, O'Neil ML, Ay C, Feng MS
Thin Solid Films, 447, 681, 2004 |
| 5 |
Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition
Cheng YL, Wang Y, Lan JK, Chen HC, Lin JH, Wu Y, Liu PT, Wu Y, Feng MS
Thin Solid Films, 469-470, 178, 2004 |
| 6 |
Mechanism of high density plasma chemical vapor deposition phosphosilicate glass process without in-situ plasma chamber clean
Lan JK, Wang YL
Thin Solid Films, 469-470, 438, 2004 |
| 7 |
Effect of substrate on the step coverage of plasma-enhanced chemical-vapor deposited tetraethylorthosilicate films
Lan JK, Wang YL, Chao CG, Lo K, Cheng YL
Journal of Vacuum Science & Technology B, 21(4), 1224, 2003 |
| 8 |
Mechanisms of circular defects for shallow trench isolation oxide deposition
Lan JK, Wang YL, Liu CP, Chao CG, Ay CY, Liu CW, Cheng YL
Journal of Vacuum Science & Technology B, 21(5), 2098, 2003 |
| 9 |
The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layer
Chiu SY, Wang YL, Liu CP, Lan JK, Ay C, Feng MS, Tsai MS, Dai BT
Materials Chemistry and Physics, 82(2), 444, 2003 |
| 10 |
X-ray reflectivity and FTIR measurements of N-2 plasma effects on the density profile of hydrogen silsesquioxane thin films
Lee HJ, Lin EK, Wu WL, Fanconi BM, Lan JK, Cheng YL, Liou HC, Wang YL, Feng MS, Chao CG
Journal of the Electrochemical Society, 148(10), F195, 2001 |
