화학공학소재연구정보센터
검색결과 : 15건
No. Article
1 Direct Measurement of Single-Molecule Ligand-Receptor Interactions
Lam KT, Taylor EL, Thompson AJ, Ruepp MD, Lochner M, Martinez MJ, Brozik JA
Journal of Physical Chemistry B, 124(36), 7791, 2020
2 Computational Study on the Photolysis of BrHgONO and the Reactions of BrHgO center dot with CH4, C2H6, NO, and NO2: Implications for Formation of Hg(II) Compounds in the Atmosphere
Lam KT, Wilhelmsen CJ, Schwid AC, Jiao YG, Dibble TS
Journal of Physical Chemistry A, 123(8), 1637, 2019
3 BrHgO center dot + C2H4 and BrHgO center dot + HCHO in Atmospheric Oxidation of Mercury: Determining Rate Constants of Reactions with Prereactive Complexes and Bifurcation
Lam KT, Wilhelmsen CJ, Dibble TS
Journal of Physical Chemistry A, 123(28), 6045, 2019
4 Graphene Nanoribbons Under Mechanical Strain
Chen CX, Wu JZ, Lam KT, Hong GS, Gong M, Zhang B, Lu Y, Antaris AL, Diao S, Guo J, Dai H
Advanced Materials, 27(2), 303, 2015
5 Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistors
Da HX, Lam KT, Samudra GS, Liang GC, Chin SK
Solid-State Electronics, 77, 51, 2012
6 InGaN/GaN multiple-quantum-well LEDs with Si-doped barriers
Hung H, Lam KT, Chang SJ, Chen CH, Kuan H, Sun YX
Journal of the Electrochemical Society, 155(6), H455, 2008
7 Influence of process flow on the characteristics of strained-Si nMOSFETs
Lam KT, Wu SL, Chang SJ, Wang YP, Liaw UH
Electrochemical and Solid State Letters, 10(11), H331, 2007
8 Flicker noise of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor with a photo-CVD SiO2 layer
Liu CH, Lam KT, Chang SJ, Wang CK, Sun YS
Journal of the Electrochemical Society, 154(2), H119, 2007
9 Al0.22Ga0.78N/GaN HFETs prepared on vicinal-cut sapphire substrates
Lam KT, Yu CL, Chang PC, Liaw UH, Lin JC, Chang SJ
Journal of the Electrochemical Society, 154(9), H811, 2007
10 Ni/Au contacts on homoepitaxial p-ZnSe with surface oxygen plasma treatments
Lin TK, Lam KT, Chang SJ, Chiou YZ, Chang SP
Journal of Vacuum Science & Technology B, 25(1), 213, 2007