검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories Paolucci GM, Bertuccio M, Compagnoni CM, Beltrami S, Spinelli AS, Lacaita AL, Visconti A Solid-State Electronics, 113, 138, 2015 |
| 2 |
Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices Maconi A, Arreghini A, Compagnoni CM, Van den Bosch G, Spinelli AS, Van Houdt J, Lacaita AL Solid-State Electronics, 74, 64, 2012 |
| 3 |
Impact of Ge-Sb-Te compound engineering on the set operation performance in phase-change memories Boniardi M, Ielmini D, Tortorelli I, Redaelli A, Pirovano A, Allegra M, Magistretti M, Bresolin C, Erbetta D, Modelli A, Varesi E, Pellizzer F, Lacaita AL, Bez R Solid-State Electronics, 58(1), 11, 2011 |
| 4 |
Explanation of programming distributions in phase-change memory arrays based on crystallization time statistics Mantegazza D, Ielmini D, Pirovano A, Lacaita AL, Varesi E, Pellizzer F, Bez R Solid-State Electronics, 52(4), 584, 2008 |
| 5 |
Status and challenges of phase change memory modeling Lacaita AL, Ielmini D, Mantegazza D Solid-State Electronics, 52(9), 1443, 2008 |
| 6 |
Phase change memories: State-of-the-art, challenges and perspectives Lacaita AL Solid-State Electronics, 50(1), 24, 2006 |
| 7 |
Switching and programming dynamics in phase-change memory cells Ielmini D, Mantegazza D, Lacaita AL, Pirovano A, Pellizzer F Solid-State Electronics, 49(11), 1826, 2005 |
| 8 |
Study of nanocrystal memory reliability by CAST structures Compagnoni CM, Ielmini D, Spinelli AS, Lacaita AL, Gerardi C Solid-State Electronics, 48(9), 1497, 2004 |
| 9 |
Modeling of stress-induced leakage current and impact ionization in MOS devices Ielmini D, Spinelli AS, Lacaita AL, Ghidini G Solid-State Electronics, 46(3), 417, 2002 |
| 10 |
Simulation of polysilicon quantization and its effect on n- and p-MOSFET performance Spinelli AS, Pacelli A, Lacaita AL Solid-State Electronics, 46(3), 423, 2002 |