검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors Fitch RC, Gillespie JK, Moser N, Jessen G, Jenkins T, Dettmer R, Via D, Crespo A, Dabiran AM, Chow PP, Osinsky A, La Roche JR, Ren F, Pearton SJ Journal of Vacuum Science & Technology B, 22(2), 619, 2004 |
| 2 |
Annealing temperature stability of Ir and Ni-based Ohmic contacts on AlGaN/GaN high electron mobility transistors Kang BS, Kim S, La Roche JR, Ren F, Fitch RC, Gillespie JK, Moser N, Jenkins T, Sewell J, Via D, Crespo A, Dabiran AM, Chow PP, Osinsky A, Pearton SJ Journal of Vacuum Science & Technology B, 22(6), 2635, 2004 |
| 3 |
GaNPN junction issues and developments Hickman R, Van Hove JM, Chow PP, Klaassen JJ, Wowchak AM, Polley CJ, King DJ, Ren F, Abernathy CR, Pearton SJ, Jung KB, Cho H, La Roche JR Solid-State Electronics, 44(2), 377, 2000 |