| 1 |
Hot-carrier-induced current capability degradation and optimization for lateral IGBT on thick SOI substrate
Zhang CW, Li Y, Yue WJ, Fu XQ, Li ZM
Solid-State Electronics, 145, 34, 2018 |
| 2 |
A new high-voltage interconnection shielding method for SOI monolithic ICs
Zhang L, Zhu J, Sun WF, Huang XQ, Zhao MN, Chen JJ, Shi LX, Chen J, Ding DS
Solid-State Electronics, 133, 25, 2017 |
| 3 |
The high temperature DC characteristics of a high voltage lateral insulated-gate bipolar transistors with NPN anode in junction isolation technology
Tsai YC, Gong J, Chan WC, Wu SY, Lien C
Solid-State Electronics, 132, 80, 2017 |
| 4 |
Comparison of short-circuit characteristics of trench gate and planar gate U-shaped channel SOI-LIGBTs
Zhang L, Zhu J, Sun WF, Zhao MN, Huang XQ, Chen JJ, Shi LX, Chen J, Ding DS
Solid-State Electronics, 135, 24, 2017 |
| 5 |
ESD robustness concern for SOI-LIGBTs with typical latch-up immunity structures
Ye R, Liu SY, Sun WF, Hou B
Solid-State Electronics, 137, 6, 2017 |
| 6 |
Turn-off failure in multi-finger SOI-LIGBT used for single chip inverter ICs
Zhang L, Zhu J, Zhao MN, Huang XQ, Chen JJ, Sun WF, Ding DS
Solid-State Electronics, 137, 29, 2017 |
| 7 |
Trigger voltage walk-out phenomenon in SOI lateral insulated gate bipolar transistor under repetitive electrostatic discharge stresses
Zhang SF, Han Y, Ma F
Solid-State Electronics, 119, 25, 2016 |
| 8 |
Analysis on the off-state design and characterization of LIGBTs in partial SOI technology
Tee EKC, Antoniou M, Udrea F, Hoelke A, Ng LY, Abidin WABZ, Pilkington SJ, Pal DK
Solid-State Electronics, 96, 38, 2014 |
| 9 |
A novel BEM-LIGBT with high current density on thin SOI layer for 600 V HVIC
Zhu J, Sun WF, Chen J, Lu SL, Zhang S, Su W
Solid-State Electronics, 100, 33, 2014 |
| 10 |
Reliability concern and design for the lateral insulator gate bipolar transistor based on SOI substrate
Liu SY, Huang TT, Sun WF, Zhang CW
Solid-State Electronics, 85, 28, 2013 |
