화학공학소재연구정보센터
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No. Article
1 Improvement of M-plane GaN thin film grown on pre-annealing beta-LiGaO2 (100) substrate
Shih CH, Lo I, Wang YC, Yang CC, Chou MMC
Journal of Crystal Growth, 340(1), 61, 2012
2 Growth of non-polar GaN on LiGaO2 by plasma-assisted MBE
Schuber R, Chen YL, Shih CH, Huang TH, Vincze P, Lo I, Chang LW, Schimmel T, Chou MMC, Schaadt DM
Journal of Crystal Growth, 323(1), 76, 2011
3 Growth of A-plane GaN on (010) LiGaO2 by plasma-assisted MBE
Schuber R, Chou MMC, Vincze P, Schimmel T, Schaadt DM
Journal of Crystal Growth, 312(10), 1665, 2010
4 Growth and characterization of ZnO films on (001), (100) and (010) LiGaO2 substrates
Huang TH, Zhou SM, Teng H, Lin H, Wang J, Han P, Zhang R
Journal of Crystal Growth, 310(13), 3144, 2008
5 Epitaxial growth of ZnO thin films on LiGaO2 substrates by pulsed-laser deposition
Liu SL, Zhou SM, Wang YZ, Zhang X, Li XM, Xia CT, Hang Y, Xu J
Journal of Crystal Growth, 292(1), 125, 2006
6 Growth and characterization of LiGaO2 substrate crystal for GaN epitaxy
Xu K, Deng PZ, Xu J, Zhou GQ, Liu WJ, Tian YL
Journal of Crystal Growth, 216(1-4), 343, 2000
7 Comparison of AlGaN and GaN grown on various substrates: Step flow growth on LiGaO2 at low growth temperature
Kang S, Doolittle WA, Stock SR, Brown AS
Materials Science Forum, 338-3, 1499, 2000
8 Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate
Doolittle WA, Kropewnicki T, Carter-Coman C, Stock S, Kohl P, Jokerst NM, Metzger RA, Kang S, Lee KK, May G, Brown AS
Journal of Vacuum Science & Technology B, 16(3), 1300, 1998