| 1 |
Application of fluorine doped oxide (SiOF) spacers for improving reliability in low temperature polycrystalline thin film transistors
Feng LW, Chang TC, Liu PT, Tu CH, Wu YC, Yang CY, Chang CY
Thin Solid Films, 517(3), 1204, 2008 |
| 2 |
Substrate current and degradation of trench LDD transistors
Landgraf E, Hofmann F, Schulz T, von Philipsborn H
Solid-State Electronics, 46(7), 965, 2002 |
| 3 |
Hot-carrier degradation in deep-submicrometer nMOSFETs: lightly doped drain vs. large angle tilt implanted drain
Rafi JM, Campabadal F
Solid-State Electronics, 45(8), 1391, 2001 |
| 4 |
Extraction of two-dimensional metal-oxide-semiconductor field effect transistor structural information from electrical characteristics
Richards WR, Shen M
Journal of Vacuum Science & Technology B, 18(1), 533, 2000 |
| 5 |
A physics-based short-channel SOI MOSFET model for fully-depleted single drain and LDD devices
Chyau CG, Jang SL, Sheu CJ
Solid-State Electronics, 44(3), 487, 2000 |
| 6 |
Extraction of the lightly doped drain concentration of fully depleted SOINMOSFETs using the back gate bias effect
Nicolett AS, Martino JA, Simoen E, Claeys C
Solid-State Electronics, 44(4), 677, 2000 |
| 7 |
Modeling of the body current in a Bi-MOS hybrid-mode environment
Yeo KS, Seah SHL, Ma JG, Do MA
Solid-State Electronics, 44(12), 2199, 2000 |
