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| No. | Article |
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| 1 |
Time-multiplexed, inductively coupled plasma process with separate SiCl4 and O-2 steps for etching of GaAs with high selectivity Golka S, Arens M, Reetz M, Kwapien T, Bouchoule S, Patriarche G Journal of Vacuum Science & Technology B, 27(5), 2270, 2009 |