검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Non-conventional scans in high-resolution X-ray diffraction analysis of epitaxial systems Dobrocka E, Hasenohrl S, Chauhan P, Kuzmik J Applied Surface Science, 461, 23, 2018 |
| 2 |
Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition Stoklas R, Gregusova D, Hasenohrl S, Brytavskyi E, Tapajna M, Frohlich K, Hascik S, Gregor M, Kuzmik J Applied Surface Science, 461, 255, 2018 |
| 3 |
Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties Tapajna M, Stoklas R, Gregusova D, Gucmann F, Husekova K, Hascik S, Frohlich K, Toth L, Pecz B, Brunner F, Kuzmik J Applied Surface Science, 426, 656, 2017 |
| 4 |
Simulation study of interface traps and bulk traps in n(++)GaN/InAlN/AlN/GaN high electron mobility transistors Molnar M, Donoval D, Kuzmik J, Marek J, Chvala A, Pribytny P, Mikolasek M, Rendek K, Palankovski V Applied Surface Science, 312, 157, 2014 |
| 5 |
Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation Cico K, Gregusova D, Kuzmik J, Jurkovic M, Alexewicz A, Poisson MAD, Pogany D, Strasser G, Delage S, Frohlich K Solid-State Electronics, 67(1), 74, 2012 |
| 6 |
InAIN/GaN metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases Cico K, Kuzmik J, Liday J, Husekova K, Pozzovivo G, Carlin JF, Grandjean N, Pogany D, Vogrincic P, Frohlich K Journal of Vacuum Science & Technology B, 27(1), 218, 2009 |
| 7 |
Transient self-heating effects in multifinger AlGaN/GaN HEMTs, with metal airbridges Kuzmik J, Bychikhin S, Lossy R, Wuerfl HJ, Poisson MAD, Teyssier JP, Gaquiere C, Pogany D Solid-State Electronics, 51(6), 969, 2007 |
| 8 |
Electrical overstress in AlGaN/GaN HEMTs: study of degradation processes Kuzmik J, Pogany D, Gornik E, Javorka P, Kordos P Solid-State Electronics, 48(2), 271, 2004 |
| 9 |
Schottky contacts on reactive-ion etched InGaP Kuzmik J, Darmo J, Kudela R, Hascik S, Mozolova Z Journal of Vacuum Science & Technology B, 15(6), 2016, 1997 |