검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Demonstration of isospecific free radical polymerization of acrylate controlled by conformation and chirality of monomer Tanaka H, Matsubara Y, Kusunoki K, Saito N, Kibayashi T Journal of Polymer Science Part A: Polymer Chemistry, 53(17), 2007, 2015 |
| 2 |
Nitrogen doping of 4H-SiC by the top-seeded solution growth technique using Si-Ti solvent Kusunoki K, Kamei K, Seki K, Harada S, Ujihara T Journal of Crystal Growth, 392, 60, 2014 |
| 3 |
Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique Kusunoki K, Okada N, Kamei K, Moriguchi K, Daikoku H, Kado M, Sakamoto H, Bessho T, Ujihara T Journal of Crystal Growth, 395, 68, 2014 |
| 4 |
Thermodynamic evaluation of the C-Cr-Si, C-Ti-Si, and C-Fe-Si systems for rapid solution growth of SiC Narumi T, Kawanishi S, Yoshikawa T, Kusunoki K, Kamei K, Daikoku H, Sakamoto H Journal of Crystal Growth, 408, 25, 2014 |
| 5 |
Solution growth behavior of Sic by a temperature difference method using Fe-Si solvent Kawanishi S, Yoshikawa T, Morita K, Okada N, Kusunoki K, Kamei K Journal of Crystal Growth, 381, 121, 2013 |
| 6 |
Solution growth of single crystalline 6H, 4H-SiC using Si-Ti-C melt Kamei K, Kusunoki K, Yashiro N, Okada N, Tanaka T, Yauchi A Journal of Crystal Growth, 311(3), 855, 2009 |
| 7 |
Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution Kusunoki K, Kamei K, Ueda Y, Naga S, Ito Y, Hasebe M, Ujihara T, Nakajima K Materials Science Forum, 483, 13, 2005 |
| 8 |
Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: a Raman spectroscopic study Ujihara T, Munetoh S, Kusunoki K, Kamei K, Usami N, Fujiwara K, Sazaki G, Nakajima K Thin Solid Films, 476(1), 206, 2005 |
| 9 |
Solution growth of self-standing 6H-SiC single crystal using metal solvent Kusunoki K, Munetoh S, Kamei K, Hasebe M, Ujihara T, Nakajima K Materials Science Forum, 457-460, 123, 2004 |
| 10 |
TEM studies on the initial stage of seeded solution growth of 6H-SiC using metal solvent Kamei K, Kusunoki K, Munetoh S, Ujihara T, Nakajima K Materials Science Forum, 457-460, 347, 2004 |