검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Evaluation of incorporation efficiency of group V source gases in metal organic chemical vapor deposition of GaInNAs for high quality 1.21 mu m quantum-well ridge wave guide lasers Kushibe M, Hashimoto R, Ezaki M, Hatakoshi GI, Nishioka M, Arakawa Y Journal of Crystal Growth, 298, 658, 2007 |
| 2 |
Impact ionization coefficients of 4H-SiC Hatakeyama T, Watanabe T, Kojima K, Sano N, Shiraishi K, Kushibe M, Imai S, Shinohe T, Suzuki T, Tanaka T, Arai K Materials Science Forum, 457-460, 673, 2004 |
| 3 |
High-rate epitaxial growth of 4H-SiC using a vertical-type, quasi-hot-wall CVD reactor Masahara K, Takahashi T, Kushibe M, Ohno T, Nishio J, Kojima K, Ishida Y, Suzuki T, Tanaka T, Yoshida S, Arai K Materials Science Forum, 389-3, 179, 2002 |
| 4 |
Investigation of residual impurities in 4H-SiC epitaxial layers grown by hot-wall chemical vapor deposition Nishio J, Kushibe M, Masahara K, Kojima K, Ohno T, Ishida Y, Takahashi T, Suzuki T, Tanaka T, Yoshida S, Arai K Materials Science Forum, 389-3, 215, 2002 |
| 5 |
3C-SiC(100) homoepitaxial growth by chemical vapor deposition and Schottky barrier junction characteristics Ishida Y, Kushibe M, Takahashi T, Okumura H, Yoshida S Materials Science Forum, 389-3, 275, 2002 |
| 6 |
Investigation of the relationship between defects and electrical properties of 3C-SiC epilayers Ishida Y, Kushibe M, Takahashi T, Okumura H, Yoshida S Materials Science Forum, 389-3, 459, 2002 |
| 7 |
Distribution profile of deep levels in SiC observed by isothermal capacitance transient spectroscopy Fujimaki M, Ono R, Kushibe M, Masahara K, Kojima K, Shinohe T, Okushi H, Arai K Materials Science Forum, 389-3, 851, 2002 |
| 8 |
Influence of the crystalline quality of epitaxial layers on inversion channel mobility in 4H-SiC MOSFETs Kojima K, Ohno T, Suzuki S, Senzaki J, Harada S, Fukuda K, Kushibe M, Masahara K, Ishida Y, Takahashi T, Suzuki T, Tanaka T, Yoshida S, Arai K Materials Science Forum, 389-3, 1053, 2002 |
| 9 |
A large reduction in interface-state density for MOS capacitor on 4H-SiC (11(2)over-bar0) face using H-2 and H2O vapor atmosphere post-oxidation annealing Fukuda K, Senzaki J, Kushibe M, Kojima K, Kosugi R, Suzuki S, Harada S, Suzuki T, Tanaka T, Arai K Materials Science Forum, 389-3, 1057, 2002 |
| 10 |
Measurement of Hall mobility in 4H-SiC for improvement of the accuracy of the mobility model in device simulation Hatakeyama T, Watanabe T, Kushibe M, Kojima K, Imai S, Suzuki T, Shinohe T, Tanaka T, Arai K Materials Science Forum, 433-4, 443, 2002 |