화학공학소재연구정보센터
검색결과 : 53건
No. Article
1 A Fluorescence-Detected Coordination-Induced Spin State Switch
Kurz H, Schotz K, Papadopoulos I, Heinemann FW, Maid H, Guldi DM, Kohler A, Horner G, Weber B
Journal of the American Chemical Society, 143(9), 3466, 2021
2 Spin-Crossover Iron(II) Coordination Polymer with Fluorescent Properties: Correlation between Emission Properties and Spin State
Lochenie C, Schotz K, Panzer F, Kurz H, Maier B, Puchtler F, Agarwal S, Kohler A, Weber B
Journal of the American Chemical Society, 140(2), 700, 2018
3 SiliconPV 2012 generation of defect-related acceptor states by laser doping
Safiei A, Derix R, Suckow S, Koch H, Breuer U, Pletzer TM, Wolter K, Kurz H
Solar Energy Materials and Solar Cells, 106, 2, 2012
4 Quantum wells based on Si/SiOx stacks for nanostructured absorbers
Berghoff B, Suckow S, Rolver R, Spangenberg B, Kurz H, Sologubenko A, Mayer J
Solar Energy Materials and Solar Cells, 94(11), 1893, 2010
5 Gd silicate: A high-k dielectric compatible with high temperature annealing
Gottlob HDB, Stefani A, Schmidt M, Lemme MC, Kurz H, Mitrovic IZ, Werner M, Davey WM, Hall S, Chalker PR, Cherkaoui K, Hurley PK, Piscator J, Engstrom O, Newcomb SB
Journal of Vacuum Science & Technology B, 27(1), 249, 2009
6 Complementary metal oxide semiconductor integration of epitaxial Gd2O3
Lemme MC, Gottlob HDB, Echtermeyer TJ, Schmidt M, Kurz H, Endres R, Schwalke U, Czernohorkky M, Tetzlaff D, Osten HJ
Journal of Vacuum Science & Technology B, 27(1), 258, 2009
7 Mobility extraction in SOI MOSFETs with sub 1 nm body thickness
Schmidt M, Lemme MC, Gottlob HDB, Driussi F, Selmi L, Kurz H
Solid-State Electronics, 53(12), 1246, 2009
8 Lithography potentials of UV-nanoimprint
Fuchs A, Bender M, Plachetka U, Kock L, Koo N, Wahlbrink T, Kurz H
Current Applied Physics, 8(6), 669, 2008
9 Leakage current mechanisms in epitaxial Gd2O3 high-k gate dielectrics
Gottlob HDB, Echtermeyer TJ, Schmidt M, Mollenhauer T, Wahlbrink T, Lemme MC, Kurz H
Electrochemical and Solid State Letters, 11(3), G12, 2008
10 Mobility in graphene double gate field effect transistors
Lemme MC, Echtermeyer TJ, Baus M, Szafranek BN, Bolten J, Schmidt M, Wahlbrink T, Kurz H
Solid-State Electronics, 52(4), 514, 2008