검색결과 : 53건
No. | Article |
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1 |
A Fluorescence-Detected Coordination-Induced Spin State Switch Kurz H, Schotz K, Papadopoulos I, Heinemann FW, Maid H, Guldi DM, Kohler A, Horner G, Weber B Journal of the American Chemical Society, 143(9), 3466, 2021 |
2 |
Spin-Crossover Iron(II) Coordination Polymer with Fluorescent Properties: Correlation between Emission Properties and Spin State Lochenie C, Schotz K, Panzer F, Kurz H, Maier B, Puchtler F, Agarwal S, Kohler A, Weber B Journal of the American Chemical Society, 140(2), 700, 2018 |
3 |
SiliconPV 2012 generation of defect-related acceptor states by laser doping Safiei A, Derix R, Suckow S, Koch H, Breuer U, Pletzer TM, Wolter K, Kurz H Solar Energy Materials and Solar Cells, 106, 2, 2012 |
4 |
Quantum wells based on Si/SiOx stacks for nanostructured absorbers Berghoff B, Suckow S, Rolver R, Spangenberg B, Kurz H, Sologubenko A, Mayer J Solar Energy Materials and Solar Cells, 94(11), 1893, 2010 |
5 |
Gd silicate: A high-k dielectric compatible with high temperature annealing Gottlob HDB, Stefani A, Schmidt M, Lemme MC, Kurz H, Mitrovic IZ, Werner M, Davey WM, Hall S, Chalker PR, Cherkaoui K, Hurley PK, Piscator J, Engstrom O, Newcomb SB Journal of Vacuum Science & Technology B, 27(1), 249, 2009 |
6 |
Complementary metal oxide semiconductor integration of epitaxial Gd2O3 Lemme MC, Gottlob HDB, Echtermeyer TJ, Schmidt M, Kurz H, Endres R, Schwalke U, Czernohorkky M, Tetzlaff D, Osten HJ Journal of Vacuum Science & Technology B, 27(1), 258, 2009 |
7 |
Mobility extraction in SOI MOSFETs with sub 1 nm body thickness Schmidt M, Lemme MC, Gottlob HDB, Driussi F, Selmi L, Kurz H Solid-State Electronics, 53(12), 1246, 2009 |
8 |
Lithography potentials of UV-nanoimprint Fuchs A, Bender M, Plachetka U, Kock L, Koo N, Wahlbrink T, Kurz H Current Applied Physics, 8(6), 669, 2008 |
9 |
Leakage current mechanisms in epitaxial Gd2O3 high-k gate dielectrics Gottlob HDB, Echtermeyer TJ, Schmidt M, Mollenhauer T, Wahlbrink T, Lemme MC, Kurz H Electrochemical and Solid State Letters, 11(3), G12, 2008 |
10 |
Mobility in graphene double gate field effect transistors Lemme MC, Echtermeyer TJ, Baus M, Szafranek BN, Bolten J, Schmidt M, Wahlbrink T, Kurz H Solid-State Electronics, 52(4), 514, 2008 |