검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
Arsenic atomic layer doping in Si using AsH3 Yamamoto Y, Kurps R, Murota J, Tillack B Solid-State Electronics, 110, 29, 2015 |
| 2 |
Phosphorus atomic layer doping in Ge using RPCVD Yamamoto Y, Kurps R, Mai C, Costina I, Murota J, Tillack B Solid-State Electronics, 83, 25, 2013 |
| 3 |
B atomic layer doping of Ge Yamamoto Y, Kopke K, Kurps R, Murota J, Tillack B Thin Solid Films, 518, S44, 2010 |
| 4 |
Selective vapor phase etching of SiGe by HCl in a RPCVD reactor Yamamoto Y, Kopke K, Kurps R, Tillack B Applied Surface Science, 254(19), 6037, 2008 |
| 5 |
P doping control during SiGe : C epitaxy Yamamoto Y, Tillack B, Kopke K, Kurps R Thin Solid Films, 508(1-2), 288, 2006 |
| 6 |
Circuit applications of high-performance SiGe : C HBTs integrated in BiCMOS technology Winkler W, Borngraber J, Heinemann B, Rucker H, Barth R, Bauer J, Bolze D, Drews J, Ehwald KE, Grabolla T, Haak U, Hoppner W, Knoll D, Kruger D, Kuck B, Kurps R, Marschmeyer M, Richter H, Schley P, Schmidt D, Scholz R, Tillack B, Wolansky D, Wulf HE, Yamamoto Y, Zaumseil P Applied Surface Science, 224(1-4), 297, 2004 |
| 7 |
Diffusion and segregation of shallow As, and Sb junctions in silicon Kruger D, Rucker H, Heinemann B, Melnik V, Kurps R, Bolze D Journal of Vacuum Science & Technology B, 22(1), 455, 2004 |
| 8 |
Oxide formation during ion bombardment of small silicon structures Kruger D, Formanek P, Pippel E, Woltersdorf J, Bugiel E, Kurps R, Weidner G Journal of Vacuum Science & Technology B, 22(3), 1179, 2004 |
| 9 |
Transient processes and structural transformations in Si(x)Gel(1-x) layers during oxygen implantation and sputtering Kruger D, Efremov AA, Murota J, Tillack B, Kurps R, Romanova GP Applied Surface Science, 203, 285, 2003 |
| 10 |
Thermal stability of Pr2O3 films grown on Si(100) substrate Goryachko A, Liu JP, Kruger D, Osten HJ, Bugiel E, Kurps R, Melnik V Journal of Vacuum Science & Technology A, 20(6), 1860, 2002 |