검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Growth and optical properties of AlN homoepitaxial layers grown by ammonia-source molecular beam epitaxy Iwata S, Nanjo Y, Okuno T, Kurai S, Taguchi T Journal of Crystal Growth, 301, 461, 2007 |
| 2 |
Pre-treatment of GaN template for homoepitaxial growth by radio-frequency molecular beam epitaxy Kubo S, Nanba Y, Okazaki T, Manabe S, Kurai S, Taguchi T Journal of Crystal Growth, 236(1-3), 66, 2002 |
| 3 |
Growth of bulk GaN single crystals by the pressure-controlled solution growth method Inoue T, Seki Y, Oda O, Kurai S, Yamada Y, Taguchi T Journal of Crystal Growth, 229(1), 35, 2001 |
| 4 |
Defect identification in homoepitaxial- and ELO-grown GaN layers using bound-exciton Zeeman spectroscopies Kurai S, Yamada Y, Taguchi T Journal of Crystal Growth, 210(1-3), 216, 2000 |