화학공학소재연구정보센터
검색결과 : 19건
No. Article
1 Solar cell degradation caused by glass superstrate corrosion
Kudriavtsev Y, Hernandez AG, Asomoza R
Solar Energy, 187, 82, 2019
2 White luminescence emission from silicon implanted germanium
Hernandez AG, Escobosa-Echavarria AE, Kudriavtsev Y
Applied Surface Science, 428, 1098, 2018
3 Water vapor interaction with borosilicate glass
Kudriavtsev Y, Avendano M, Ramirez G, Asomoza-Palacio R, Manzanilla-Naim L
Solid State Ionics, 321, 122, 2018
4 Sn doped GaSb grown by liquid phase epitaxy
Compean-Jasso VH, de Anda F, Mishurnyi VA, Gorbatchev AY, Prutskij T, Kudriavtsev Y
Thin Solid Films, 548, 168, 2013
5 Electrical and optical properties of Si doped GaAs (631) layers studied as a function of the growth temperature
Vazquez-Cortas D, Shimomura S, Lopez-Lopez M, Cruz-Hernandez E, Gallardo-Hernandez S, Kudriavtsev Y, Mendez-Garcia VH
Journal of Crystal Growth, 347(1), 77, 2012
6 Probability of ionization of sputtered particles as a function of their energy - Part I: Negative Si- ions
Kudriavtsev Y, Villegas A, Gallardo S, Asomoza R
Applied Surface Science, 254(7), 2059, 2008
7 Ionization probability of sputtered particles as a function of their energy - Part II. Positive Si+ ions
Kudriavtsev Y, Gallardo S, Villegas A, Ramirez G, Asomoza R
Applied Surface Science, 254(13), 3801, 2008
8 Critical distance for secondary ion formation: Experimental SIMS measurements
Kudriavtsev Y, Gallardo S, Villegas A, Ramirez G, Asomoza R
Applied Surface Science, 255(4), 877, 2008
9 SIMS depth profiling analysis of halogens in CdTe/CdS/TSO solar cells using Cs2M+ cluster ions
Koudriavtseva O, Morales-Acevedo A, Kudriavtsev Y, Gallardo S, Asomoza R, Mendoza-Perez R, Sastre-Hernandez J, Contreras-Puente G
Applied Surface Science, 255(4), 1423, 2008
10 Influence of the GaAs substrate orientation on the composition of GaxIn1-xP (x approximate to 0.5) grown by LPE and MOCVD
Mishumyi VA, de Anda F, Gorbatchev AY, Kudriavtsev Y, Elyukhin VA, Prutskij T, Pelosi C, Bocchi C, Ber BY, Vazquez FEO
Thin Solid Films, 516(22), 8092, 2008