화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Fabrication of Cu2ZnSnS4 thin films using a Cu-Zn-Sn-O amorphous precursor and supercritical fluid sulfurization
Nakayasu Y, Tomai T, Oka N, Shojiki K, Kuboya S, Katayama R, Sang LW, Sumiya M, Honma I
Thin Solid Films, 638, 244, 2017
2 Influences of two-step growth and off-angle Ge substrate on crystalline quality of GaAs buffer layers grown by MOVPE
Wanarattikan P, Sanorpim S, Denchitcharoen S, Uesugi K, Kuboya S, Onabe K
Journal of Crystal Growth, 414, 15, 2015
3 Photoluminescence properties of InGaAsN films on Ge(001) vicinal substrates
Uesugi K, Kuboya S, Sanorpim S, Onabe K
Journal of Crystal Growth, 370, 46, 2013
4 Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates
Jin RG, Yagi S, Hijikata Y, Kuboya S, Onabe K, Katayama R, Yaguchi H
Journal of Crystal Growth, 378, 85, 2013
5 RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layer
Kakuda M, Morikawa S, Kuboya S, Katayama R, Yaguchi H, Onabe K
Journal of Crystal Growth, 378, 307, 2013
6 Carrier-concentration dependent photoluminescence of InAsN films grown by RF-MBE
Kuboya S, Kuroda M, Katayama R, Onabe K
Journal of Crystal Growth, 323(1), 26, 2011
7 RF-MBE growth of Si doped cubic GaN and hexagonal phase incorporated c-AlGaN films on MgO(001) substrates
Kakuda M, Kuboya S, Onabe K
Journal of Crystal Growth, 323(1), 91, 2011
8 MOVPE growth of InN films using 1,1-dimethylhydrazine as a nitrogen precursor
Thieu QT, Seki Y, Kuboya S, Katayama R, Onabe K
Journal of Crystal Growth, 311(10), 2802, 2009
9 Scanning tunneling microscope-cathodoluminescence measurement of the GaAs/AlGaAs heterostructure
Watanabe K, Nakamura Y, Ichikawa M, Kuboya S, Katayama R, Onabe K
Journal of Vacuum Science & Technology B, 27(4), 1874, 2009
10 MOVPE growth and optical characterization of GaPN films using tertiarybutylphosphine (TBP) and 1,1-dimethylhydrazine (DMHy)
Nakajima F, Ono W, Kuboya S, Katayama R, Onabe K
Journal of Crystal Growth, 298, 103, 2007