검색결과 : 10건
No. | Article |
---|---|
1 |
Epitaxy relationships between Ge-islands and SiC(0001) Ait-Mansour K, Dentel D, Kubler L, Diani M, Bischoff JL, Bolmont D Applied Surface Science, 241(3-4), 403, 2005 |
2 |
Strain-induced morphology manipulations of Si and Ge-based heterostructures on Si(001) surfaces Dentel D, Ait-Mansour K, Bischoff JL, Kubler L, Bolmont D Applied Surface Science, 235(1-2), 103, 2004 |
3 |
Substrate manipulation by insertion of a thin and strained 2D layer: effect on Ge/Si growth Simon L, Louis P, Pirri C, Aubel D, Bischoff JL, Kubler L, Bolmont D Journal of Crystal Growth, 256(1-2), 1, 2003 |
4 |
Crystal growth of 3C-SiC polytype on 6H-SiC(0001) substrate Diani M, Simon L, Kubler L, Aubel D, Matko I, Chenevier B, Madar R, Audier M Journal of Crystal Growth, 235(1-4), 95, 2002 |
5 |
3C-SiC Growth on 6H-SiC (0001) substrates Matko I, Chenevier B, Audier M, Madar R, Diani M, Simon L, Kubler L, Aubel D Materials Science Forum, 389-3, 315, 2002 |
6 |
Ge growth mode modification on carbon-induced Si(001)-c(4 x 4) surfaces Stoffel M, Simon L, Bischoff JL, Aubel D, Kubler L, Castelein G Thin Solid Films, 380(1-2), 32, 2000 |
7 |
MBE Si regrowth on carbon-induced Si(001)-c(4 x 4) reconstructions studied by RHEED Stoffel M, Simon L, Bischoff JL, Aubel D, Kubler L Thin Solid Films, 380(1-2), 259, 2000 |
8 |
Role of hydrogen during Si capping of strained Ge or Si1-xGex hut clusters Dentel D, Bischoff JL, Kubler L, Bolmont D Thin Solid Films, 336(1-2), 49, 1998 |
9 |
Strict Thermal Nitridation Selectivity Between Si and Ge Used as a Chemical Probe of the Outermost Layer of Si1-xGex Alloys and Ge/Si(001) or Si/Ge(001) Heterostructures Aubel D, Diani M, Bischoff JL, Bolmont D, Kubler L Journal of Vacuum Science & Technology B, 12(4), 2699, 1994 |
10 |
Electron-Cyclotron-Resonance Plasma Ion-Beam Effects on the Formation of SiC on Si(001) Characterized by in-Situ Photoemission Diani M, Aubel D, Bischoff JL, Kubler L, Bolmont D Thin Solid Films, 241(1-2), 305, 1994 |