화학공학소재연구정보센터
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No. Article
1 Epitaxy relationships between Ge-islands and SiC(0001)
Ait-Mansour K, Dentel D, Kubler L, Diani M, Bischoff JL, Bolmont D
Applied Surface Science, 241(3-4), 403, 2005
2 Strain-induced morphology manipulations of Si and Ge-based heterostructures on Si(001) surfaces
Dentel D, Ait-Mansour K, Bischoff JL, Kubler L, Bolmont D
Applied Surface Science, 235(1-2), 103, 2004
3 Substrate manipulation by insertion of a thin and strained 2D layer: effect on Ge/Si growth
Simon L, Louis P, Pirri C, Aubel D, Bischoff JL, Kubler L, Bolmont D
Journal of Crystal Growth, 256(1-2), 1, 2003
4 Crystal growth of 3C-SiC polytype on 6H-SiC(0001) substrate
Diani M, Simon L, Kubler L, Aubel D, Matko I, Chenevier B, Madar R, Audier M
Journal of Crystal Growth, 235(1-4), 95, 2002
5 3C-SiC Growth on 6H-SiC (0001) substrates
Matko I, Chenevier B, Audier M, Madar R, Diani M, Simon L, Kubler L, Aubel D
Materials Science Forum, 389-3, 315, 2002
6 Ge growth mode modification on carbon-induced Si(001)-c(4 x 4) surfaces
Stoffel M, Simon L, Bischoff JL, Aubel D, Kubler L, Castelein G
Thin Solid Films, 380(1-2), 32, 2000
7 MBE Si regrowth on carbon-induced Si(001)-c(4 x 4) reconstructions studied by RHEED
Stoffel M, Simon L, Bischoff JL, Aubel D, Kubler L
Thin Solid Films, 380(1-2), 259, 2000
8 Role of hydrogen during Si capping of strained Ge or Si1-xGex hut clusters
Dentel D, Bischoff JL, Kubler L, Bolmont D
Thin Solid Films, 336(1-2), 49, 1998
9 Strict Thermal Nitridation Selectivity Between Si and Ge Used as a Chemical Probe of the Outermost Layer of Si1-xGex Alloys and Ge/Si(001) or Si/Ge(001) Heterostructures
Aubel D, Diani M, Bischoff JL, Bolmont D, Kubler L
Journal of Vacuum Science & Technology B, 12(4), 2699, 1994
10 Electron-Cyclotron-Resonance Plasma Ion-Beam Effects on the Formation of SiC on Si(001) Characterized by in-Situ Photoemission
Diani M, Aubel D, Bischoff JL, Kubler L, Bolmont D
Thin Solid Films, 241(1-2), 305, 1994