검색결과 : 10건
No. | Article |
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1 |
A Domino 10-Step Total Synthesis of FR252921 and Its Analogues, Complex Macrocyclic Immunosuppressants Chen Y, Coussanes G, Souris C, Aillard P, Kaldre D, Runggatscher K, Kubicek S, Di Mauro G, Maryasin B, Maulide N Journal of the American Chemical Society, 141(35), 13772, 2019 |
2 |
Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature Phosphorus extension ion implantation Kikuchi Y, Hopf T, Mannaert G, Everaert JL, Kubicek S, Eyben P, Waite A, Borniquel JID, Variam N, Mocuta D, Horiguchi N Solid-State Electronics, 152, 58, 2019 |
3 |
Properties and growth peculiarities of Si0.30Ge0.70 stressor integrated in 14 nm fin-based p-type metal-oxide-semiconductor field-effect transistors Hikavyy A, Rosseel E, Kubicek S, Mannaert G, Favia P, Bender H, Loo R, Horiguchi N Thin Solid Films, 602, 72, 2016 |
4 |
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques Redolfi A, Kubicek S, Rooyackers R, Kim MS, Sleeckx E, Devriendt K, Shamiryan D, Vandeweyer T, Delande T, Horiguchi N, Togo M, Wouters JMD, Jurczak M, Hoffmann T, Cockburn A, Gravey V, Diehl DL Solid-State Electronics, 71, 106, 2012 |
5 |
A Selective Inhibitor and Probe of the Cellular Functions of Jumonji C Domain-Containing Histone Demethylases Luo XL, Liu YX, Kubicek S, Myllyharju J, Tumber A, Ng S, Che KH, Podoll J, Heightman TD, Oppermann U, Schreiber SL, Wang X Journal of the American Chemical Society, 133(24), 9451, 2011 |
6 |
Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession Chiarella T, Witters L, Mercha A, Kerner C, Rakowski M, Ortolland C, Ragnarsson LA, Parvais B, De Keersgieter A, Kubicek S, Redolfi A, Vrancken C, Brus S, Lauwers A, Absil P, Biesemans S, Hoffmann T Solid-State Electronics, 54(9), 855, 2010 |
7 |
Superior N- and P-MOSFET scalability using carbon co-implantation and spike annealing Augendre E, Pawlak BJ, Kubicek S, Hoffmann T, Chiarella T, Kerner C, Severi S, Falepin A, Ramos J, De Keersgieter A, Eyben P, Vanhaeren D, Vandervorst W, Jurczak M, Absil P, Biesemans S Solid-State Electronics, 51(11-12), 1432, 2007 |
8 |
A new technique to fabricate ultra-shallow-junctions, combining in situ vapour HCl etching and in situ doped epitaxial SiGe re-growth Loo R, Caymax M, Meunier-Beillard P, Peytier I, Holsteyns F, Kubicek S, Verheyen P, Lindsay R, Richard O Applied Surface Science, 224(1-4), 63, 2004 |
9 |
Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures Marchand B, Cretu B, Ghibaudo G, Balestra F, Blachier D, Leroux C, Deleonibus S, Guegan G, Reimbold G, Kubicek S, DeMeyer K Solid-State Electronics, 46(3), 337, 2002 |
10 |
Transistor optimisation for a low cost, high performance 0.13 mu m CMOS technology Augendre E, Kubicek S, De Keersgieter A, Mertens S, Lindsay R, Verbeeck R, Van Laer J, Dupas L, Badenes G Solid-State Electronics, 46(7), 959, 2002 |