검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects Diagne B, Pregaldiny F, Lallement C, Sallese JM, Krummenacher F Solid-State Electronics, 52(1), 99, 2008 |
| 2 |
An EKV-based high voltage MOSFET model with improved mobility and drift model Chauhan YS, Gillon R, Bakeroot B, Krummenacher F, Declercq M, Ionescu AM Solid-State Electronics, 51(11-12), 1581, 2007 |
| 3 |
Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, Desoete B, Frere S, Desormeaux AB, Sharma A, Declercq M, Ionescu AM Solid-State Electronics, 50(11-12), 1801, 2006 |
| 4 |
Derivation of Shockley-Read-Hall recombination rates in bulk and PD-SOI MOSFET's channels valid in all modes of operation Sallese JM, Krummenacher F, Fazan P Solid-State Electronics, 48(9), 1539, 2004 |
| 5 |
Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model Sallese JM, Bucher M, Krummenacher F, Fazan P Solid-State Electronics, 47(4), 677, 2003 |