화학공학소재연구정보센터
검색결과 : 45건
No. Article
1 Termination of hollow core nanopipes in GaN by an AN interlayer
Contreras O, Ruiz-Zepeda F, Avalos-Borja M, Dadgar A, Krost A
Journal of Crystal Growth, 455, 43, 2016
2 Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality
Berger C, Dadgar A, Blasing J, Lesnik A, Veit P, Schmidt G, Hempel T, Christen J, Krost A, Strittmatter A
Journal of Crystal Growth, 414, 105, 2015
3 In-situ growth monitoring of AlInN/AlGaN distributed Bragg reflectors for the UV-spectral range
Berger C, Dadgar A, Blasing J, Krost A
Journal of Crystal Growth, 370, 87, 2013
4 Anisotropic bow and plastic deformation of GaN on silicon
Dadgar A, Fritze S, Schulz O, Hennig J, Blasing J, Witte H, Diez A, Heinle U, Kunze M, Daumiller I, Haberland K, Krost A
Journal of Crystal Growth, 370, 278, 2013
5 MOVPE growth of semi-polar GaN light-emitting diode structures on planar Si(112) and Si(113) substrates
Ravash R, Dadgar A, Bertram F, Dempewolf A, Metzner S, Hempel T, Christen J, Krost A
Journal of Crystal Growth, 370, 288, 2013
6 Thin-film InGaN/GaN Vertical Light Emitting Diodes Using GaN on Silicon-On-Insulator Substrates
Bin Dolmanan S, Teo SL, Lin VK, Hui HK, Dadgar A, Krost A, Tripathy S
Electrochemical and Solid State Letters, 14(11), H460, 2011
7 Luminescence Properties of Photonic Crystal InGaN/GaN Light Emitting Layers on Silicon-on-Insulator
Lin VKX, Tripathy S, Teo SL, Dolmanan SB, Dadgar A, Noltemeyer M, Franke A, Bertram F, Christen J, Krost A
Electrochemical and Solid State Letters, 13(10), H343, 2010
8 Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(110) and other high-index surfaces
Reiher F, Dadgar A, Blasing J, Wieneke M, Krost A
Journal of Crystal Growth, 312(2), 180, 2010
9 Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers
Lautenschlaeger S, Eisermann S, Hofmann MN, Roemer U, Pinnisch M, Laufer A, Meyer BK, von Wenckstern H, Lajn A, Schmidt F, Grundmann M, Blaesing J, Krost A
Journal of Crystal Growth, 312(14), 2078, 2010
10 Low-temperature/high-temperature AlN superlattice buffer layers for high-quality AlxGa1-xN on Si (111)
Saengkaew P, Dadgar A, Blaesing J, Hempel T, Veit P, Christen J, Krost A
Journal of Crystal Growth, 311(14), 3742, 2009