화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface
Kropman D, Mellikov E, Opik A, Lott K, Karner T, Heinmaa I, Laas T, Medvid A, Skorupa W, Prucnal S, Rebohle L, Zvyagin S, Cizmar E, Ozerov M, Wosnitza J
Thin Solid Films, 518(9), 2374, 2010
2 Interaction between point defects, extended defects and impurities in the Si-SiO2 system during the process of its formation
Kropman D, Karner T, Abru U, Ugaste U, Mellikov E
Thin Solid Films, 459(1-2), 53, 2004
3 Defect structure relaxation process in the Si-SiO2 system
Kropman D, Abru U, Karner T
Applied Surface Science, 166(1-4), 475, 2000
4 On the kinetics of generation of point defects in the Si-SiO2 system
Kropman D, Abru U, Samoson A, Karner T
Thin Solid Films, 343-344, 412, 1999