검색결과 : 4건
No. | Article |
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1 |
Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface Kropman D, Mellikov E, Opik A, Lott K, Karner T, Heinmaa I, Laas T, Medvid A, Skorupa W, Prucnal S, Rebohle L, Zvyagin S, Cizmar E, Ozerov M, Wosnitza J Thin Solid Films, 518(9), 2374, 2010 |
2 |
Interaction between point defects, extended defects and impurities in the Si-SiO2 system during the process of its formation Kropman D, Karner T, Abru U, Ugaste U, Mellikov E Thin Solid Films, 459(1-2), 53, 2004 |
3 |
Defect structure relaxation process in the Si-SiO2 system Kropman D, Abru U, Karner T Applied Surface Science, 166(1-4), 475, 2000 |
4 |
On the kinetics of generation of point defects in the Si-SiO2 system Kropman D, Abru U, Samoson A, Karner T Thin Solid Films, 343-344, 412, 1999 |