검색결과 : 16건
No. | Article |
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1 |
Quantifying Confidence in DFT-Predicted Surface Pourbaix Diagrams of Transition-Metal Electrode-Electrolyte Interfaces Vinogradova O, Krishnamurthy D, Pande V, Viswanathan V Langmuir, 34(41), 12259, 2018 |
2 |
The principles of cascading power limits in small, fast biological and engineered systems Ilton M, Bhamla MS, Ma XT, Cox SM, Fitchett LL, Kim Y, Koh JS, Krishnamurthy D, Kuo CY, Temel FZ, Crosby AJ, Prakash M, Sutton GP, Wood RJ, Azizi E, Bergbreiter S, Patek SN Science, 360(6387), 397, 2018 |
3 |
Study on nitrogen-induced defects formation and annealing effects in TlInGaAsN alloy system Kim KM, Kim WB, Krishnamurthy D, Ryu JH, Hasegawa S, Asahi H Journal of Crystal Growth, 368, 35, 2013 |
4 |
Efficient Asymmetric Synthesis of P-Chiral Phosphine Oxides via Properly Designed and Activated Benzoxazaphosphinine-2-oxide Agents Han ZXS, Goyal N, Herbage MA, Sieber JD, Qu B, Xu YB, Li ZB, Reeves JT, Desrosiers JN, Ma SL, Grinberg N, Lee H, Mangunuru HPR, Zhang YD, Krishnamurthy D, Lu BZ, Song JHJ, Wang GJ, Senanayake CH Journal of the American Chemical Society, 135(7), 2474, 2013 |
5 |
Studies on the InGaGdN/GaN magnetic semiconductor heterostructures grown by plasma-assisted molecular-beam epitaxy Tawil SNM, Krishnamurthy D, Kakimi R, Emura S, Hasegawa S, Asahi H Journal of Crystal Growth, 323(1), 351, 2011 |
6 |
Computational modeling of microfluidic fuel cells with flow-through porous electrodes Krishnamurthy D, Johansson EO, Lee JW, Kjeang E Journal of Power Sources, 196(23), 10019, 2011 |
7 |
MBE growth and characterization of TlInGaAsN double quantum well structures Krishnamurthy D, Shanthi S, Kim KM, Sakai Y, Ishimaru M, Hasegawa S, Asahi H Journal of Crystal Growth, 311(7), 1733, 2009 |
8 |
MBE growth of TlInGaAs/TlInP/InP SCH LD structures and their laser operation with low-temperature variation of lasing wavelength Fujiwara A, Krishnamurthy D, Matsumoto T, Hasegawa S, Asahi H Journal of Crystal Growth, 301, 109, 2007 |
9 |
TlGaInNAs/GaAs double quantum well structures: Effect of barrier layers and substrate orientation Krishnamurthy D, Matsumoto T, Fujiwara A, Hasegawa S, Asahi H Journal of Crystal Growth, 301, 534, 2007 |
10 |
Gas source molecular-beam epitaxial growth of TlInGaAsN double quantum well light emitting diode structures and thallium incorporation characteristics Matsumoto T, Krishnamurthy D, Fujiwara A, Hasegawa S, Asahi H Journal of Crystal Growth, 295(2), 133, 2006 |