검색결과 : 20건
| No. | Article |
|---|---|
| 1 |
The Albicidin Resistance Factor AlbD Is a Serine Endopeptidase That Hydrolyzes Unusual Oligoaromatic-Type Peptides Vieweg L, Kretz J, Pesic A, Kerwat D, Gratz S, Royer M, Cociancich S, Mainz A, Sussmuth RD Journal of the American Chemical Society, 137(24), 7608, 2015 |
| 2 |
Detailed characterization of hydrogen silsesquioxane for e-beam applications in a dynamic random access memory pilot line environment Keil K, Choi KH, Hohle C, Kretz J, Szikszai L, Bartha JW Journal of Vacuum Science & Technology B, 27(1), 47, 2009 |
| 3 |
Resolution and total blur: Correlation and focus dependencies in e-beam lithography Keil K, Hauptmann M, Kretz J, Constancias C, Pain L, Bartha JW Journal of Vacuum Science & Technology B, 27(6), 2722, 2009 |
| 4 |
Evaluation of hybrid lithography and mix and match scenarios for electron beam direct write applications Hohle C, Arndt C, Choi KH, Kretz J, Lutz T, Thrum F, Keil K Journal of Vacuum Science & Technology B, 25(6), 2038, 2007 |
| 5 |
Influence of crystal orientation and body doping on trigate transistor performance Landgraf E, Rosner W, Stadele M, Dreeskornfeld L, Hartwich J, Hofmann F, Kretz J, Lutz T, Luyken RJ, Schulz T, Specht M, Risch L Solid-State Electronics, 50(1), 38, 2006 |
| 6 |
NVM based on FinFET device structures Hofmann F, Specht M, Dorda U, Kommling R, Dreeskornfeld L, Kretz J, Stadele M, Rosner W, Risch L Solid-State Electronics, 49(11), 1799, 2005 |
| 7 |
High-resolution scanning spreading resistance microscopy of surrounding-gate transistors Alvarez D, Schomann S, Goebel B, Manger D, Schlosser T, Slesazeck S, Hartwich J, Kretz J, Eyben P, Fouchier M, Vandervorst W Journal of Vacuum Science & Technology B, 22(1), 377, 2004 |
| 8 |
Impact of technology parameters on device performance of UTB-SOI CMOS Schulz T, Pacha C, Luyken RJ, Stadele M, Hartwich J, Dreeskornfeld L, Landgraf E, Kretz J, Rosner W, Specht M, Hofmann F, Risch L Solid-State Electronics, 48(4), 521, 2004 |
| 9 |
Nanoscale FinFETs for low power applications Rosner W, Landgraf E, Kretz J, Dreeskornfeld L, Schafer H, Stadele M, Schulz T, Hofmann F, Luyken RJ, Specht M, Hartwich J, Pamler W, Risch L Solid-State Electronics, 48(10-11), 1819, 2004 |
| 10 |
High precision etching of Si/SiO2 on a high-density helicon etcher for nanoscale devices Dreeskornfeld L, Hartwich J, Kretz J, Schmitt-Landsiedel D, Loraine D, Powell K, Thomas DJ Journal of the Electrochemical Society, 150(11), G702, 2003 |