검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
GaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxide Polyakov AY, Markov AV, Duhnovsky MP, Mezhennyi MV, Donskov AA, Malakhov SS, Govorkov AV, Kozlova YP, Pavlov VF, Smirnov NB, Yugova TG, Belogorokhov AI, Belogorokhov IA, Ratnikova AK, Fyodorov YY, Kudryashov OY, Leontyev IA, Ratushnyi VI, Pearton SJ Journal of Vacuum Science & Technology B, 28(5), 1011, 2010 |
| 2 |
a-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers Polyakov AY, Markov AV, Mezhennyi MV, Donskov AA, Malakhov SS, Govorkov AV, Kozlova YP, Pavlov VF, Smirnov NB, Yugova TG, Lee IH, Han J, Sun Q, Pearton SJ Journal of Vacuum Science & Technology B, 28(5), 1039, 2010 |
| 3 |
Improved crystalline quality nonpolar a-GaN films grown by hydride vapor phase epitaxy Donskov AA, D'yakonov LI, Govorkov AV, Kozlova YP, Malakhov SS, Markov AV, Mezhennyi MV, Pavlov VF, Polyakov AY, Smirnov NB, Yugova TG, Pearton SJ Journal of Vacuum Science & Technology B, 26(6), 1937, 2008 |
| 4 |
Electrical properties and deep levels in bulk solution grown GaAs crystal Markov AV, Polyakov AY, Smirnov NB, Govorkov AV, Biberin VI, Korovin NS, Gavrin VN, Efimov GD, Kalikhov AV, Kozlova YP, Veretenkin EP, Eremin VK, Verbitskaya EM, Bowles TJ Solid-State Electronics, 46(12), 2161, 2002 |