검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
MBE-grown metamorphic lasers for applications at telecom wavelengths Ledentsov NN, Shchukin VA, Kettler T, Posilovic K, Bimberg D, Karachinsky LY, Gladyshev AY, Maximov MV, Novikov II, Shernyakov YM, Zhukov AE, Ustinov VM, Kovsh AR Journal of Crystal Growth, 301, 914, 2007 |
| 2 |
MBE-grown ultra-large aperture single-mode vertical-cavity surface-emitting laser with all-epitaxial filter section Blokhin SA, Karachinsky LY, Novikov II, Kuznetsov SM, Gordeev NY, Shernyakov YM, Savelyev AV, Maximov MV, Mutig A, Hopfer F, Kovsh AR, Mikhri SS, Krestnikov IL, Livshits DA, Ustinov VM, Shchukin VA, Ledentsov NN, Bimberg D Journal of Crystal Growth, 301, 945, 2007 |
| 3 |
High-power 1.3 mu m InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system Wilk A, Kovsh AR, Mikhrin SS, Chaix C, Novikov II, Maximov MV, Shernyakov YM, Ustinov VM, Ledentsov NN Journal of Crystal Growth, 278(1-4), 335, 2005 |
| 4 |
High nitrogen content InGaAsN/GaAs single quantum well for 1.55 mu m applications grown by molecular beam epitaxy Wang JS, Kovsh AR, Hsiao RS, Chen LP, Chen JF, Lay TS, Chi JY Journal of Crystal Growth, 262(1-4), 84, 2004 |
| 5 |
Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 mu m Wang JS, Hsiao RS, Lin G, Lin KF, Liu HY, Lai CM, Wei L, Liang CY, Chi JY, Kovsh AR, Maleev NA, Livshits DA, Chen JF, Yu HC, Ustinov VM Journal of Vacuum Science & Technology B, 22(6), 2663, 2004 |
| 6 |
InAs/InGaAs/GaAs quantum dot lasers of 1.3 mu m range with enhanced optical gain Kovsh AR, Maleev NA, Zhukov AE, Mikhrin SS, Vasil'ev AP, Semenova EA, Shernyakov YM, Maximov MV, Livshits DA, Ustinov VM, Ledentsov NN, Bimberg D, Alferov ZI Journal of Crystal Growth, 251(1-4), 729, 2003 |
| 7 |
Molecular beam epitaxy growth of GaAsN layers with high luminescence efficiency Kovsh AR, Wang JS, Wei L, Shiao RS, Chi JY, Volovik BV, Tsatsul'nikov AF, Ustinov VM Journal of Vacuum Science & Technology B, 20(3), 1158, 2002 |
| 8 |
1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots Maleev NA, Sakharov AV, Moeller C, Krestnikov IL, Kovsh AR, Mikhrin SS, Zhukov AE, Ustinov VM, Passenberg W, Pawlowski E, Kunezel H, Tsatsul'nikov AF, Ledentsov NN, Bimberg D, Alferov ZI Journal of Crystal Growth, 227, 1146, 2001 |
| 9 |
1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy Ustinov VM, Zhukov AE, Maleev NA, Kovsh AR, Mikhrin SS, Volovik BV, Musikhin YG, Shernyakov YM, Maximov MV, Tsatsul'nikov AF, Ledentsov NN, Alferov ZI, Lott JA, Bimberg D Journal of Crystal Growth, 227, 1155, 2001 |
| 10 |
Quantum dot lasers: breakthrough in optoelectronics Bimberg D, Grundmann M, Heinrichsdorff F, Ledentsov NN, Ustinov VM, Zhukov AE, Kovsh AR, Maximov MV, Shernyakov YM, Volovik BV, Tsatsul'nikov AF, Kop'ev PS, Alferov ZI Thin Solid Films, 367(1-2), 235, 2000 |