화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Effects of ultrathin AlN prelayers on the spontaneous growth of GaN nanowires by plasma assisted molecular beam epitaxy
Eftychis S, Kruse JE, Tsagaraki K, Koukoula T, Kehagias T, Komninou P, Georgakilas A
Journal of Crystal Growth, 514, 89, 2019
2 Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires
Eftychis S, Kruse J, Koukoula T, Kehagias T, Komninou P, Adikimenakis A, Tsagaraki K, Androulidaki M, Tzanetakis P, Iliopoulos E, Georgakilas A
Journal of Crystal Growth, 442, 8, 2016
3 Structure and strain state of polar and semipolar InGaN quantum dots
Koukoula T, Lotsari A, Kehagias T, Dimitrakopulos GP, Hausler I, Das A, Monroy E, Karakostas T, Komninou P
Applied Surface Science, 260, 7, 2012