검색결과 : 20건
| No. | Article |
|---|---|
| 1 |
High temperature rapid thermal oxidation and nitridation of 4H-SiC in diluted N2O and NO ambient Kosugi R, Fukuda K, Arai K Materials Science Forum, 483, 669, 2005 |
| 2 |
Deep UV excitation Raman spectroscopy of homoepitaxial 4H-SiC films grown by microwave plasma chemical vapor deposition Okamoto M, Kosugi R, Nakashima S, Fukuda K, Arai K Materials Science Forum, 457-460, 629, 2004 |
| 3 |
Diluted nitric oxide (NO) annealing of SiO2/4H-SiC in cold-wall oxidation furnace Kosugi R, Fukuda K Materials Science Forum, 457-460, 1345, 2004 |
| 4 |
Fabrication of double implanted (0001) 4H-SiC MOSFETs by using pyrogenic re-oxidation annealing Kosugi R, Kiritani N, Suzuki K, Yatsuo T, Adachi K, Fukuda K Materials Science Forum, 457-460, 1397, 2004 |
| 5 |
Homoepitaxial growth of 4H-SiC thin film below 1000 degrees C microwave plasma chemical vapor deposition Okamoto M, Kosugi R, Tanaka Y, Takeuchi D, Nakashima S, Nishizawa S, Fukuda K, Okushi H, Arai K Materials Science Forum, 389-3, 299, 2002 |
| 6 |
Improvements in electrical properties of n-type-implanted 4H-SiC substrates using high-temperature rapid thermal annealing Senzaki J, Harada S, Kosugi R, Suzuki S, Fukuda K, Arai K Materials Science Forum, 389-3, 795, 2002 |
| 7 |
ESR characterization of SiC bulk crystals and SiO2/SiC interface Isoya J, Kosugi R, Fukuda K, Yamasaki S Materials Science Forum, 389-3, 1025, 2002 |
| 8 |
Characterization of the interfaces between SiC and oxide films by spectroscopic ellipsometry Tomioka Y, Iida T, Midorikawa M, Tukada H, Yoshimoto K, Hijikata Y, Yaguchi H, Yoshikawa M, Ishida Y, Kosugi R, Yoshida S Materials Science Forum, 389-3, 1029, 2002 |
| 9 |
Correlation between inversion channel mobility and interface traps near the conduction band in SiC MOSFETs Suzuki S, Harada S, Kosugi R, Senzaki J, Fukuda K Materials Science Forum, 389-3, 1045, 2002 |
| 10 |
Influence of the wet re-oxidation procedure on inversion mobility of 4H-SiC MOSFETs Kosugi R, Okamoto M, Suzuki S, Senzaki J, Harada S, Fukuda K, Arai K Materials Science Forum, 389-3, 1049, 2002 |