검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
High-quality nanothick single-crystal Y2O3 films epitaxially grown on Si (111): Growth and structural characteristics Lee YJ, Lee WC, Nieh CW, Yang ZK, Kortan AR, Hong M, Kwo J, Hsu CH Journal of Vacuum Science & Technology B, 26(3), 1124, 2008 |
| 2 |
Advances in high kappa gate dielectrics for Si and III-V semiconductors Kwo J, Hong M, Busch B, Muller DA, Chabal YJ, Kortan AR, Mannaerts JP, Yang B, Ye P, Gossmann H, Sergent AM, Ng KK, Bude J, Schulte WH, Garfunkel E, Gustafsson T Journal of Crystal Growth, 251(1-4), 645, 2003 |
| 3 |
Single-crystal GaN/Gd2O3/GaN heterostructure Hong M, Kwo J, Chu SNG, Mannaerts JP, Kortan AR, Ng HM, Cho AY, Anselm KA, Lee CM, Chyi JI Journal of Vacuum Science & Technology B, 20(3), 1274, 2002 |
| 4 |
New phase formation of Gd2O3 films on GaAs(100) Kortan AR, Hong M, Kwo J, Mannaerts JP, Krajewski JJ, Kopylov N, Steiner C, Bolliger B, Erbudak M Journal of Vacuum Science & Technology B, 19(4), 1434, 2001 |
| 5 |
Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes Hong M, Anselm KA, Kwo J, Ng HM, Baillargeon JN, Kortan AR, Mannaerts JP, Cho AY, Lee CM, Chyi JI, Lay TS Journal of Vacuum Science & Technology B, 18(3), 1453, 2000 |
| 6 |
Characteristics of Ga2O3(Gd2O3)/GaAs interface: Structures and compositions Hong M, Kortan AR, Kwo J, Mannaerts JP, Krajewski JJ, Lu ZH, Hsieh KC, Cheng KY Journal of Vacuum Science & Technology B, 18(3), 1688, 2000 |
| 7 |
Superconductivity and Cation-Vacancy Ordering in the Rare-Earth Fulleride Yb2.75C60 Ozdas E, Kortan AR, Kopylov N, Ramirez AP, Siegrist T, Rabe KM, Bair HE, Schuppler S, Citrin PH Nature, 375(6527), 126, 1995 |